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150KR20A

Description
rectifiers SI stnd recov DO-8 200-1000v 150a 200PV
CategoryDiscrete semiconductor    diode   
File Size432KB,2 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
Environmental Compliance
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150KR20A Overview

rectifiers SI stnd recov DO-8 200-1000v 150a 200PV

150KR20A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGeneSiC
package instructionO-MUPM-H1
Reach Compliance Codecompliant
Is SamacsysN
applicationGENERAL PURPOSE
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.33 V
JEDEC-95 codeDO-8
JESD-30 codeO-MUPM-H1
Maximum non-repetitive peak forward current3740 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature200 °C
Minimum operating temperature-40 °C
Maximum output current150 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
Maximum reverse current35000 µA
surface mountNO
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
150K(R)20A thru 150K(R)100A
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types up to 1000 V V
RRM
DO-8 Package
V
RRM
= 200 V - 1000 V
I
F
=150 A
Standard 
2
2
2
1
"R" Orientation
1
1
1
2
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive p
p
peak reverse voltage
g
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
I
2
t for fusing
Operating temperature
Storage temperature
Symbol
V
RRM
V
DC
I
F
I
F,SM
I
2
t
T
j
T
stg
T
C
110 °C
T
C
= 25 °C, t
p
= 8.3 ms
t = 8.3ms
Conditions
150K(R)20A 150K(R)40A 150K(R)60A 150K(R)80A 150K(R)100A Unit
200
200
150
3740
58000
-40 to 200
-40 to 200
400
400
150
3740
58000
-40 to 200
-40 to 200
600
600
150
3740
58000
-40 to 200
-40 to 200
800
800
150
3740
58000
-40 to 200
-40 to 200
1000
1000
150
3740
V
V
A
A
58000
A
2
sec
-40 to 200
°C
-40 to 200
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 150 A, T
j
= 25 °C
V
R
= V
RRM
, T
j
= 175 °C
150K(R)20A 150K(R)40A 150K(R)60A 150K(R)80A 150K(R)100A Unit
1.33
35
1.33
35
1.33
35
1.33
32
1.33
24
V
mA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
0.25
0.25
0.25
0.25
0.25
°C/W
www.genesicsemi.com
1

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