IPB081N06L3 G datasheet, PDF - EEWORLD Datasheet

IPB081N06L3 G: Descriptionmosfet optimos 3 pwr transt 60v 50a; Categorysemiconductor Discrete semiconductor; File Size681KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IPB081N06L3 G Overview

mosfet optimos 3 pwr transt 60v 50a

Parameter Name	Attribute value
Manufacture	Infine
Product Category	MOSFET
RoHS	Yes
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Breakdown Voltage	20 V
Id - Continuous Drain Curre	50 A
Rds On - Drain-Source Resistance	8.1 mOhms
Configurati	Single
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipati	79 W
Mounting Style	SMD/SMT
Package / Case	D2PAK-2
Packaging	Reel
Channel Mode	Enhanceme
Fall Time	7 ns
Minimum Operating Temperature	- 55 C
Rise Time	26 ns
Factory Pack Quantity	1000
Typical Turn-Off Delay Time	37 ns

	IPB081N06L3 G	IPB081N06L3GXT
Description	mosfet optimos 3 pwr transt 60v 50a	Power Field-Effect Transistor, 50A I(D), 60V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

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