Fast Recovery
Epitaxial Diode (FRED)
DSEI 2x101
I
FAVM
= 2x96 A
V
RRM
= 600 V
t
rr
= 35 ns
AC-1
IK-10
V
RSM
V
600
V
RRM
V
600
Type
DSEI 2x 101-06P
LN -9
VX-18
D5
Symbol
I
FRMS
I
FAVM
①
I
FRM
I
FSM
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight
Symbol
I
R
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 25°C V
R
= 0.8 • V
RRM
T
VJ
= 125°C V
R
= 0.8 • V
RRM
I
F
= 100 A;
T
VJ
= 150°C
T
VJ
= 25°C
T
C
= 25°C
50/60 Hz, RMS
I
ISOL
≤
1 mA
Mounting torque (M4)
t = 1 min
t=1s
Conditions
Maximum Ratings (per diode)
150
96
tbd
1200
-40...+150
150
-40...+150
250
2500
3000
1.5 - 2.0
14 - 18
24
A
A
A
A
°C
°C
°C
W
V~
V~
Nm
lb.in.
g
Features
•
•
•
•
•
•
2 independent FRED in 1 package
Isolation voltage 3000 V~
Planar passivated chips
Leads suitable for PC board soldering
Very short recovery time
Soft recovery behaviour
T
VJ
= T
VJM
T
C
= 70°C; rectangular; d = 0.5
t
P
< 10 µs; rep. rating; pulse width limited by T
VJM
T
VJ
= 45°C; t = 10 ms (50 Hz), sine
Applications
• Antiparallel diode for high frequency
switching devices
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• Low noise switching
• Small and light weight
Characteristic Values (per diode)
typ.
max.
3
1
20
1.17
1.25
0.7
4.7
0.5
0.05
mA
mA
mA
V
V
V
mΩ
K/W
K/W
ns
A
mm
mm
m/s²
V
F
V
T0
r
T
R
thJC
R
thCK
t
rr
I
RM
d
S
d
A
a
For power-loss calculations only
T
VJ
= T
VJM
I
F
= 1 A; -di/dt = 400 A/µs
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 80 A; -di
F
/dt = 200 A/µs
L
≤
0.05 µH; T
VJ
= 100°C
Creeping distance on surface
Creeping distance in air
Allowable acceleration
40
19
60
24
min. 11.2
min. 11.2
max. 50
①
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
139
© 2001 IXYS All rights reserved
1-2
DSEI 2x 101-06P
150
A
125
I
F
Q
r
100
7
T = 100°C
µC
VJ
V = 300V
6
R
5
4
I
F
=200A
I
F
=100A
I
F
= 50A
80
A
T
VJ
= 100°C
70
V
R
= 300V
I
RM
60
50
40
30
I
F
=200A
I
F
=100A
I
F
= 50A
75
T
VJ
=150°C
3
2
1
T
VJ
=25°C
50
T
VJ
=100°C
20
10
0
A/µs 1000
-di
F
/dt
0
200
400
600 A/µs 1000
800
-di
F
/dt
25
0
0.0
0.5
1.0 V
V
F
1.5
0
100
D5
Fig. 1 Forward current I
F
versus V
F
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
260
ns
240
t
rr
220
200
T
VJ
= 100°C
V
R
= 300V
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
60
V
50
V
FR
40
t
fr
V
FR
T
VJ
= 100°C
I
F
= 100A
1.4
3.0
µs
2.5
t
fr
2.0
1.5
1.0
0.5
1.2
K
f
1.0
Q
r
I
RM
0.8
180
160
I
F
=200A
I
F
=100A
I
F
= 50A
30
20
10
0
0.6
140
0.4
0
50
100
T
VJ
°C 150
120
0
200
400
600 A/µs 1000
800
-di
F
/dt
0
200
400
600 800
di
F
/dt
0.0
1000
A/µs
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
1
K/W
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Dimensions in mm (1mm = 0.0394“)
D=0.7
Z
thJC
0.5
0.3
0.2
0.1
0.1
0.05
Single Pulse
DSEI 2x101-06
0.05
0.001
0.01
0.1
1s
10
t
Fig. 7 Transient thermal impedance junction to case at various duty cycles
© 2001 IXYS All rights reserved
2-2
RF/Wirelessly
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