SPP80N03 datasheet, PDF - EEWORLD Datasheet

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SPP80N03: DescriptionSIPMOS Power Transistor; CategoryDiscrete semiconductor The transistor; File Size79KB，9 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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SPP80N03 Overview

SIPMOS Power Transistor

SPP80N03 Parametric

Parameter Name	Attribute value
Parts packaging code	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	700 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	80 A
Maximum drain-source on-resistance	0.006 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	320 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON
Base Number Matches	1

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SPP80N03

SIPMOS® Power Transistor

Features

•

N channel

•

Product Summary

Drain source voltage

Drain-Source on-state resistance

Continuous drain current

Enhancement mode

DS(on)

0.006

Ω

•

Avalanche rated

•

dv/dt rated

•

175°C operating temperature

Type

SPP80N03

SPB80N03

Package

Ordering Code

Packaging

Pin 1

Pin 2 Pin 3

P-TO220-3-1 Q67040-S4734-A2 Tube

P-TO263-3-2 Q67040-S4734-A3 Tabe and Reel

Maximum Ratings,

= 25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol

Value

320

700

kV/µs

Unit

= 25 °C,

= 100 °C

Pulsed drain current

Dpulse

dv/dt

= 25 °C

Avalanche energy, single pulse

= 80 A,

= 25 V,

= 25

Ω

Avalanche energy, periodic limited by

jmax

Reverse diode dv/dt

= 80 A,

= 24 V, di/dt = 200 A/µs,

jmax

= 175 °C

Gate source voltage

Power dissipation

tot

j ,

stg

±20

300

-55... +175

55/175/56

°C

= 25 °C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Semiconductor Group

SPP80N03 Related Products

	SPP80N03	SPB80N03
Description	SIPMOS Power Transistor	SIPMOS Power Transistor
package instruction	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	700 mJ	700 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V
Maximum drain current (ID)	80 A	80 A
Maximum drain-source on-resistance	0.006 Ω	0.006 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3	R-PSSO-G2
Number of components	1	1
Number of terminals	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	320 A	320 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON

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