mosfet mosfet id180 bvdass100
Parameter Name | Attribute value |
Manufacture | IXYS |
Product Category | MOSFET |
RoHS | Yes |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Curre | 180 A |
Rds On - Drain-Source Resistance | 6.4 mOhms |
Configurati | Single |
Maximum Operating Temperature | + 175 C |
Pd - Power Dissipati | 480 W |
Mounting Style | Through Hole |
Package / Case | TO-220-3 |
Packaging | Tube |
Channel Mode | Enhanceme |
Fall Time | 31 ns |
Forward Transconductance - Mi | 110 S |
Minimum Operating Temperature | - 55 C |
Rise Time | 54 ns |
Factory Pack Quantity | 50 |
Typical Turn-Off Delay Time | 42 ns |
Unit Weigh | 2.300 g |