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IXTP180N10T

Description
mosfet mosfet id180 bvdass100
Categorysemiconductor    Discrete semiconductor   
File Size149KB,6 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
Environmental Compliance  
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IXTP180N10T Overview

mosfet mosfet id180 bvdass100

IXTP180N10T Parametric

Parameter NameAttribute value
ManufactureIXYS
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Curre180 A
Rds On - Drain-Source Resistance6.4 mOhms
ConfiguratiSingle
Maximum Operating Temperature+ 175 C
Pd - Power Dissipati480 W
Mounting StyleThrough Hole
Package / CaseTO-220-3
PackagingTube
Channel ModeEnhanceme
Fall Time31 ns
Forward Transconductance - Mi110 S
Minimum Operating Temperature- 55 C
Rise Time54 ns
Factory Pack Quantity50
Typical Turn-Off Delay Time42 ns
Unit Weigh2.300 g

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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