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2SD2386

Description
NPN TRIPLI DIFFUSED TYPE ( POWER AMPLIFIER APPLICATIONS)
CategoryDiscrete semiconductor    The transistor   
File Size134KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SD2386 Overview

NPN TRIPLI DIFFUSED TYPE ( POWER AMPLIFIER APPLICATIONS)

2SD2386 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instruction2-16C1A, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)7 A
Collector-emitter maximum voltage140 V
ConfigurationDARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)2000
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment70 W
Maximum power dissipation(Abs)70 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
VCEsat-Max2.5 V
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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