SSF3117
DESCRIPTION
The SSF3117 uses advanced trench technology
to provide excellent R
DS(ON)
and low gate charge .
A Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch,
or for DC-DC conversion applications.
GENERAL FEATURES
●
MOSFET
V
DS
= -20V,I
D
= -3.3A
R
DS(ON)
< 180mΩ @ V
GS
=-1.8V
R
DS(ON)
< 120mΩ @ V
GS
=-2.5V
R
DS(ON)
< 90mΩ @ V
GS
=-4.5V
●
SCHOTTKY
V
R
= 30V, I
F
= 2A, V
F
<0.53V @ 1.0A
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Schematic diagram
Marking and pin Assignment
Application
●DC-DC
conversion applications
●Load
switch
●Power
management
DFN2X2-6L
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
3117
Device
SSF3117
Device Package
DFN2X2-6L
Reel Size
－
Tape width
－
Quantity
－
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current
Schottky reverse voltage
Continuous Forward Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
V
R
I
F
P
D
T
J
,T
STG
1.5
-55 To 150
-55 To 150
MOSFET
-20
±8
-3.3
-20
30
2
Schottky
Unit
V
V
A
A
V
A
W
℃
THERMAL CHARACTERISTICS
MOSFET
Thermal Resistance, Junction-to-Ambient (Note 2)
R
θJA
54
℃
/W
©Silikron Semiconductor CO.,LTD.
1
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v1.1
SSF3117
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-4.5V, I
D
=-2.0A
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
=-2.5V, I
D
=-2.0A
V
GS
=-1.8V, I
D
=-1.6A
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
Reverse Recovery Time
Reverse Recovery Charge
SCHOTTKY PARAMETERS
Forward Voltage Drop
Maximum reverse leakage current
Junction Capacitance
V
F
I
rm
C
T
I
F
=1.0A
V
R
=30V
V
R
=5V，f = 1.0 MHz
0.48
5
38
0.53
10
V
uA
pF
V
SD
T
rr
Q
rr
V
GS
=0V,I
S
=-1A
V
GS
= 0 V
d
ISD
/dt = 100 A/us
I
S
= -1.0 A
-0.84
16.2
5.7
-1.0
V
nS
nC
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=-10V,I
D
=-2.0A,
V
GS
=-4.5V
V
DD
=-10V,I
D
=-2.0A
V
GS
=-4.5V,R
GEN
=2.0Ω
5.5
15
19.8
21.6
5.5
1.0
1.4
6.2
nS
nS
nS
nS
nC
nC
nC
C
lss
C
oss
C
rss
V
DS
=-10V,V
GS
=0V,
F=1.0MHz
530
90
55
PF
PF
PF
g
FS
V
DS
=-5V,I
D
=-2.0A
-0.4
-0.7
67
91
130
3.1
-1.0
90
120
180
S
mΩ
V
BV
DSS
I
DSS
I
GSS
V
GS
=0V I
D
=-250μA
V
DS
=-16V,V
GS
=0V
V
GS
=±8V,V
DS
=0V
-20
-1
±100
V
μA
nA
Symbol
Condition
Min
Typ
Max
Unit
NOTES:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
2
http://www.silikron.com
v1.1
SSF3117
ATTENTION:
■
Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron
representative nearest you before using any Silikron products described or contained herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test devices
mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to
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Silikron Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use
or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product
that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
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©Silikron Semiconductor CO.,LTD.
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