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C148PA

Description
HIGH SPEED Silicon Controlled Rectifier
File Size147KB,4 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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C148PA Overview

HIGH SPEED Silicon Controlled Rectifier

Cs
J.
S.11S.U
ucti, One.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon
Controlled Rectifier
1200 VOLTS
63A RMS
HIGH SPEED
C148 Silicon Controlled Rectifier is designed for power
switching at high frequencies. This is an Vll-dif fused device which is consider-
able smaller in size than comparably rated high power SCR's.
FEATURES:
Fully characterized for operation inverter and chopper applications.
High dv/dt with selections available.
Excellent surge and I
2
t ratings providing easy fusing.
Compact hermetic package, 54 — 28 stud.
MAXIMUM ALLOWABLE RATINGS
TYPES
REPETITIVE PEAK OFF-STATE
VOLTAGE, V
O R M
»
Tj = -40°C to +125°C
REPETITIVE PEAK REVERSE
VOLTAGE, V
R R M
l
Tj = -40°C to +125°C
NON-REPETITIVE PEAK
REVERSE VOLTAGE, V
RSM
»
Tj - +125°C
C148M
C148S
C148N
C148T
C148P
C148PA
C148PB
1
600 Volts
700
800
900
1000
1100
1200
600 Volts
700
800
900
1000
1100
1200
720 Volts
840
960
1080
1200
1320
1440
Half sinewave waveform, 10 ms max. pulse width.
RMS On-State Current, IX(RMS)
Peak One Cycle Surge (Non-Repetitive) On-State Current, I
TS
M (60 Hz)
Peak One Cycle Surge (Non-Repetitive) On-State Current, I
TSM
(50 Hz)
I
2
t (for fusing) for times > 1.5 milliseconds
I
2
t (for fusing) for times > 8.3 milliseconds
Critical Rate-of-Rise of On-State Current, Non-Repetitive
Critical Rate-of-Rise of On-State Current, Repetitive
Average Gate Power Dissipation, PQ(AV)
Storage Temperature, T
stg
Operating Temperature, Tj
Stud Torque
63 Amperes
700 Amperes
670 Amperes
1360 (RMS Ampere)
2
Seconds
2000 (RMS Ampere)
2
Seconds
100 A/MS t
75 A/MS t
2 Watts
-40°Cto+150°C
-40°Cto+125°C
30 Lb.-In.
3.4 N-rn
Quality Semi-Conductors

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C148PA C148 C148N C148S C148M C148T C148PB C148P
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