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GS832236B-250

Description
512K X 72 CACHE SRAM, 6.5 ns, PBGA209
Categorystorage   
File Size821KB,41 Pages
ManufacturerETC1
Download Datasheet Parametric View All

GS832236B-250 Overview

512K X 72 CACHE SRAM, 6.5 ns, PBGA209

GS832236B-250 Parametric

Parameter NameAttribute value
maximum clock frequency250 MHz
Number of functions1
Number of terminals209
Minimum operating temperature-40 Cel
Maximum operating temperature85 Cel
Rated supply voltage2.5 V
Minimum supply/operating voltage2.3 V
Maximum supply/operating voltage2.7 V
Processing package description14 X 22 MM, 1 MM PITCH, BGA-209
each_compliYes
stateNRFND
sub_categorySRAMs
ccess_time_max6.5 ns
i_o_typeCOMMON
jesd_30_codeR-PBGA-B209
storage density3.77E7 bit
Memory IC typeCACHE SRAM
memory width72
moisture_sensitivity_levelNOT SPECIFIED
Number of digits524288 words
Number of digits512K
operating modeSYNCHRONOUS
organize512KX72
Output characteristics3-STATE
Packaging MaterialsPLASTIC/EPOXY
ckage_codeLBGA
ckage_equivalence_codeBGA209,11X19,40
packaging shapeRECTANGULAR
Package SizeGRID ARRAY, LOW PROFILE
serial parallelPARALLEL
eak_reflow_temperature__cel_NOT SPECIFIED
wer_supplies__v_2.5/3.3
qualification_statusCOMMERCIAL
seated_height_max1.7 mm
standby_current_max0.0800 Amp
standby_voltage_mi2.38 V
Maximum supply voltage0.4000 Amp
surface mountYES
CraftsmanshipCMOS
Temperature levelINDUSTRIAL
terminal coatingNOT SPECIFIED
Terminal formBALL
Terminal spacing1 mm
Terminal locationBOTTOM
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
length22 mm
width14 mm
dditional_featureFLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
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