2NS9S6 datasheet, PDF - EEWORLD Datasheet

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2NS9S6: DescriptionHIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS; File Size120KB，3 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS

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^mi-Conductor <Piodueti,

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2N5986, 2N5987

2N5988

NPN

2N5989, 2N5991

HIGH POWER PLASTIC

COMPLEMENTARY SILICON POWER TRANSISTORS

... designed for use In general-purpose amplifier and switch

ing

circuits.

• Collector Base Voltage - VCBO = 60 Vdc - 2N6986. 2N5989

• 80 Vdc - 2N6987

- 100 Vdc

2N5988, 2N5991

• Collector-Emitter Voltage - VCEO - 40 Vdc - 2N5986, 2N5989

= eO Vdc - 2N5987

= 80 Vdc - 2N5988, 2N5991

• DC Current Gain -

hr-E = 20-120 9>lc-6-0 Adc

= 7.0 (Mini <s> Ic " 12

• Collector-Emitter Saturation Voltage -

)

12 AMPERE

TOWER TRANSISTORS

COMPLEMENTARY SILICON

40, 60, 80 VOLTS

100 WATTS

°-

7 Vdc (Ma

'C • 6.0 Adc

•MAXIMUM RATINGS

Bating

Collector-BaM Voltage

Collector-Emitter Voltage

F miller Basa Voltage

Collector Current - Continuous

Peak

Bale Current

Total Power Diisipationffl>TC • 25°C

Derate above 25°C

Operating and Storaoe Junction

Temperature flarigft

THERMAL CHARACTERISTICS

Cherecterirtic

Trivrrdal Hnittance, Junction ID COM

• Indicate* JEDEC R»ghiered Oiu

FIOUflE 1 -POWER DERATING

Symbol

«JC

1.25

2NS9S6

2N5988

Symfaal 2N5989 2N5987 2N5991

Unit

Vdc

Adc

VCB

VCEO

VEB

5.0

too

4.0

TJ, T,,,

100

-6510

'150

Wain

w/°c

°c

flu i

—LJL

STYlE ?;

PIN 1. EMITTER

2. COLLECTOR

3. BASE

Unit

°C/W

NOTES:

1. DIM "D" UNCDNTflOtLEO IN ZON£ "H"

2. DIM "F"OIA THRU

3. HEAT SINK CONTACT AREA (BOTTOM)

< LEAOSV»ITHINOJ05"BADOFTnUE

POSITION (Tf) AT MAXIMUM MATERIAL

CONDITION.

MILLIMETERS

DIM MIN

MAX

12.83

INCHES

MAX

16. U

3.1?

351

0.635

0.495

T7T

OJM"

osoT

5.131

0.043

OjM}

<; ssc

T67

no?

TdiT

TYT

IMS

100

l!0

131

4.70.

l«

TC. CMC riMfIIATum I»C1

NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without

notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to

press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ

Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

2NS9S6 Related Products

	2NS9S6	2N5987	2N5989	2N5991
Description	HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS	HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS	HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS	HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS
Reach Compliance Code	-	unknow	unknow	unknow
Base Number Matches	-	1	1	1

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