Preliminary
Datasheet
RQK0605JGDQA
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
R
DS(on)
= 82 m typ (V
GS
= 10 V, I
D
= 1.5 A)
Low drive current
High speed switching
4.5 V gate drive
R07DS0309EJ0500
(Previous: REJ03G1278-0400)
Rev.5.00
Mar 28, 2011
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
1
2
S
1
2
G
1. Source
2. Gate
3. Drain
Note:
Marking is “JG”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(Pulse) Note1
I
DR
Pch
Note2
Tch
Tstg
Ratings
60
20
3.1
4.5
3.1
0.8
150
–55 to +150
Unit
V
V
A
A
A
W
C
C
Notes: 1. PW
10
s,
duty cycle
1%
2. When using the glass epoxy board (FR-4: 40
40
1 mm)
R07DS0309EJ0500 Rev.5.00
Mar 28, 2011
Page 1 of 6
RQK0605JGDQA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
Min
60
20
—
—
1.0
—
—
3.6
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
82
93
6
405
58
23
14
43
43
3.7
6.9
0.9
0.8
0.8
Max
—
—
10
1
2.0
103
131
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
V
A
A
V
m
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
100 A,
V
DS
= 0
V
GS
=
16
V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 1.5 A, V
GS
= 10 V
Note3
I
D
= 1.5 A, V
GS
= 4.5 V
Note3
I
D
= 1.5 A, V
DS
= 10 V
Note3
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 1 A, V
GS
= 10 V,
R
L
= 10
,
Rg = 4.7
V
DD
= 10 V, V
GS
= 10 V,
I
D
= 3.1A
I
F
= 1.5 A, V
GS
= 0
Note3
R07DS0309EJ0500 Rev.5.00
Mar 28, 2011
Page 2 of 6
RQK0605JGDQA
Preliminary
Main Characteristics
Maximum Channel Power
Dissipation Curve
1.2
100
Operation in this area
is limited by R
DS(on)
10
PW
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
1.0
0.8
0.6
0.4
0.2
0
100
μs
1
1
D
C
s
m
=
10
m
s
O
ra
pe
0.1
tio
n
0
25
50
75
100
125
150
0.01
0.01
Tc = 25°C
0.1
1
10
100
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40
×
40
×
1 mm)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
5
5,7,9,10 V
3V
Typical Transfer Characteristics
(1)
5
V
DS
= 10 V
Pulse Test
2.5 V
Drain Current I
D
(A)
2.6V
3
2
2.3 V
Pulse Test
Tc = 25
°
C
2.2V
Drain Current I
D
(A)
4
2.4 V
4
3
2
Tc = 75°C
25°C
–25°C
2.1 V
1
2.0 V
V
GS
= 0 V
1
0
0
10
0
2
4
6
8
0
1
2
3
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Gate to Source Cutoff Voltage vs.
Gate to Source Cutoff Voltage
V
GS(off)
(V)
Typical Transfer Characteristics
(2)
10
V
DS
= 10 V
Pulse Test
Case Temperature
2.5
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
1
Tc = 75°C
2.0
0.1
1.5
I
D
= 10 mA
1 mA
0.01
25°C
–25°C
1.0
0.1 mA
0.001
0.0001
0
0.5
1
1.5
2
2.5
3
0.5
–25
0
25
50
75
100 125
150
Gate to Source Voltage V
GS
(V)
Case Temperature Tc (°C)
R07DS0309EJ0500 Rev.5.00
Mar 28, 2011
Page 3 of 6
RQK0605JGDQA
Drain to Source Saturation Voltage V
DS(on)
(mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
Tc = 25°C
300
Preliminary
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS(on)
(Ω)
400
1.0
Pulse Test
Tc = 25°C
0.3
V
GS
= 4.5 V
10 V
200
I
D
= 1.5 A
1.0 A
0.5 A
0.1
100 0.2 A
0.03
0
0
0.1 A
2
4
6
8
10
0.01
0.1
0.3
1
3
10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Case Temperature
Static Drain to Source on State Resistance
vs. Case Temperature
Drain to Source on State Resistance
R
DS(on)
(mΩ)
200
Pulse Test
V
GS
= 4.5 V
1A
0.5 A
100
0.2 A
I
D
= 1.5 A
Drain to Source on State Resistance
R
DS(on)
(mΩ)
200
Pulse Test
V
GS
= 10 V
150
150
I
D
= 1.5 A
1A
100
0.5 A
0.2 A
50
–25
0
25
50
75
100 125 150
50
–25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Case Temperature Tc (°C)
100
Pulse Test
V
DS
= 10 V
–25°C
10
25°C
1
Tc = 75°C
Zero Gate Voltage Drain current I
DSS
(nA)
Forward Transfer Admittance vs.
Drain Current
Zero Gate Voltage Drain current vs.
Case Temperature
10000
Pulse Test
V
GS
= 0 V
V
DS
= 60 V
Forward Transfer Admittance |yfs| (S)
1000
100
10
0.1
0.1
1
Drain Current I
D
(A)
10
1
–25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
R07DS0309EJ0500 Rev.5.00
Mar 28, 2011
Page 4 of 6
RQK0605JGDQA
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
100
I
D
= 1.5 A
Tc = 25°C
80
V
DD
= 10 V
25 V
60
V
DS
50 V
V
DD
= 50 V
25 V
20
0
0
2
10 V
4
6
8
4
0
10
V
GS
12
16
20
1000
V
DD
= 10 V
V
GS
= 10 V
Rg = 4.7
Ω
P
W
= 5
μs
Tc = 25°C
td(off)
Preliminary
Switching Characteristics
Switching Time t (ns)
tf
100
40
8
td(on)
10
tr
1
0.01
0.1
1
10
Gate Charge Qg (nC)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
V
GS
= 0 V
f = 1 MHz
650
Input Capacitance vs.
Gate to Source Voltage
V
DS
= 0 V
f = 1 MHz
Ciss, Coss, Crss (pF)
1000
Ciss
600
Ciss (pF)
60
550
100
Coss
10
Crss
500
450
400
–10
1
0
10
20
30
40
50
–5
0
5
10
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
1.0
V
GS
= 0
0.8
5
Pulse Test
Tc = 25°C
4
V
GS
= 5 V
Body-Drain Diode Forward Voltage V
SDF
(V)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I
DR
(A)
3
10 V
0.6
I
D
= 10 mA
0.4
1 mA
0.2
0
–25
2
0V
–5 V, –10 V
1
0
0
0.4
0.8
1.2
1.6
2.0
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature Tc (°C)
R07DS0309EJ0500 Rev.5.00
Mar 28, 2011
Page 5 of 6
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