®
STTH30L06C
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Table 1: Main Product Characteristics
I
F(AV)
V
RRM
T
j
V
F
(typ)
t
rr
(max)
FEATURES AND BENEFITS
■
■
■
■
Up to 2 x 20 A
600 V
175°C
0.95 V
55 ns
A1
K
A2
A1
K
A2
A1
K
A2
Ultrafast switching
Low reverse current
Low thermal resistance
Reduces switching & conduction losses
TO-220AB
STTH30L06CT
K
TO-247
STTH30L06CW
DESCRIPTION
The STTH30L06, which is using ST Turbo 2 600V
technology, is specially suited for use in switching
power supplies, and industrial applications, as
rectification and discontinuous mode PFC boost
diode.
Table 2: Order Codes
Part Number
STTH30L06CT
STTH30L06CW
A2
A1
D
2
PAK
STTH30L06CG
Marking
STTH30L06CT
STTH30L06CW
Part Number
STTH30L06CG
STTH30L06GG-TR
Marking
STTH30L06CG
STTH30L06CG
Table 3: Absolute Ratings
(limiting values, per diode)
Symbol
Parameter
V
RRM
Repetitive peak reverse voltage
I
F(RMS)
I
F(AV)
RMS forward voltage
Average forward current
δ
= 0.5
Tc = 140°C Per diode
Tc = 125°C Per device
Tc = 120°C Per diode
Tc = 110°C Per device
tp = 10ms sinusoidal
Value
600
30
15
30
20
40
130
-65 to + 175
175
Unit
V
A
A
I
FSM
T
stg
T
j
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
A
°C
°C
September 2004
REV. 1
1/8
STTH30L06C
Table 4: Thermal Resistance
Symbol
R
th(j-c)
R
th(c)
Junction to case
Coupling
Parameter
Per diode
Total
Value (max).
1.7
1.15
0.6
°C/W
Unit
°C/W
When the diodes 1 and 2 are used simultaneously:
∆
Tj(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Table 5: Static Electrical Characteristics
(per diode)
Symbol
I
R
*
V
F
**
Parameter
Test conditions
V
R
= V
RRM
40
I
F
= 15A
0.95
I
F
= 30A
1.15
T
j
= 150°C
Forward voltage drop
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
Pulse test:
** tp = 380 µs,
δ
< 2%
To evaluate the conduction losses use the following equation: P = 0.94 x I
F(AV)
+ 0.017 I
F (RMS)
* tp = 5 ms,
δ
< 2%
Min.
Typ
Max.
15
400
1.55
1.2
1.76
1.45
Unit
µA
Reverse leakage current T
j
= 25°C
V
2
Table 6: Dynamic Characteristics
(per diode)
Symbol
t
rr
I
RM
t
fr
V
FP
Parameter
Reverse recovery
time
Reverse recovery
current
Forward recovery
time
Forward recovery
voltage
T
j
= 25°C
Test conditions
I
F
= 0.5A Irr = 0.25A I
R
=1A
I
F
= 1A dI
F
/dt = 50 A/µs V
R
=30V
T
j
= 125°C I
F
= 15A
V
R
= 400V
dI
F
/dt = 100 A/µs
T
j
= 25°C
T
j
= 25°C
I
F
= 15A
dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
I
F
= 15A dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
3.0
60
8.5
Min. Typ Max. Unit
55
85
12
300
A
ns
V
ns
2/8
STTH30L06C
Figure 1: Conduction losses versus average
forward current (per diode)
P(W)
24
22
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
100
Figure 2: Forward voltage drop versus forward
current (per diode)
I
FM
(A)
δ
= 0.1
δ
= 0.05
δ
= 0.2
δ
= 0.5
90
80
T
j
=150°C
(maximum values)
δ
=1
70
60
50
40
T
j
=150°C
(typical values)
T
j
=25°C
(maximum values)
T
30
20
I
F(AV)
(A)
δ
=tp/T
tp
10
0
0.0
0.5
1.0
1.5
V
FM
(V)
2.0
2.5
3.0
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration
Z
th(j-c)
/R
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Figure 4: Peak reverse recovery current versus
dI
F
/dt (typical values, per diode)
I
RM
(A)
35
V
R
=400V
T
j
=125°C
30
25
I
F
=0.5 x I
F(AV)
I
F
=I
F(AV)
I
F
=2 x I
F(AV)
20
15
10
5
T
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
t
p
(s)
1.E-01
δ
=tp/T
tp
0
1.E+00
0
50
100
150
dI
F
/dt(A/µs)
200
250
300
350
400
450
500
Figure 5: Reverse recovery time versus dI
F
/dt
(typical values, per diode)
t
rr
(ns)
800
700
600
500
400
I
F
=I
F(AV)
I
F
=2 x I
F(AV)
V
R
=400V
T
j
=125°C
Figure 6: Reverse recovery charges versus
dI
F
/dt (typical values, per diode)
Q
rr
(nC)
1800
1600
1400
1200
I
F
=I
F(AV)
V
R
=400V
T
j
=125°C
I
F
=2 x I
F(AV)
1000
800
I
F
=0.5 x I
F(AV)
I
F
=0.5 x I
F(AV)
300
200
100
600
400
200
dI
F
/dt(A/µs)
0
0
50
100
150
200
250
300
350
400
450
500
0
0
100
dI
F
/dt(A/µs)
200
300
400
500
3/8
STTH30L06C
Figure 7: Reverse recovery softness factor
versus dI
F
/dt (typical values, per diode)
S factor
1.6
1.4
1.2
1.0
1.0
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
Q
RR
I
F
=I
F(AV)
V
R
=400V
Reference: T
j
=125°C
I
F
< 2 x I
F(AV)
V
R
=400V
T
j
=125°C
Figure 8: Relative variations of dynamic
parameters versus junction temperature
1.4
S factor
1.2
t
rr
I
RM
dI
F
/dt(A/µs)
0.0
0
50
100
150
200
250
300
350
400
450
500
0.0
25
50
T
j
(°C)
75
100
125
Figure 9: Transient peak forward voltage
versus dI
F
/dt (typical values, per diode)
V
FP
(V)
12
11
10
9
8
7
6
5
4
3
2
1
0
0
50
100
150
200
250
300
350
400
450
500
I
F
=I
F(AV)
T
j
=125°C
Figure 10: Forward recovery time versus dI
F
/dt
(typical values, per diode)
t
fr
(ns)
260
240
220
200
180
160
140
120
100
80
60
40
I
F
=I
F(AV)
V
FR
=1.1 x V
F
max.
T
j
=125°C
dI
F
/dt(A/µs)
20
0
0
100
dI
F
/dt(A/µs)
200
300
400
500
Figure 11: Junction capacitance versus
reverse voltage applied (typical values, per
diode)
C(pF)
1000
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
Figure 12: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy FR4, e
CU
=35µm) (D
2
PAK)
R
th(j-a)
(°C/W)
80
70
60
50
100
40
30
20
10
V
R
(V)
10
1
10
100
1000
0
0
5
10
15
S
CU
(cm²)
20
25
30
35
40
4/8
STTH30L06C
Figure 13: TO-247 Package Mechanical Data
DIMENSIONS
REF.
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A
4.85
5.15 0.191
0.203
D
2.20
2.60 0.086
0.102
E
0.40
0.80 0.015
0.031
F
1.00
1.40 0.039
0.055
F1
3.00
0.118
F2
2.00
0.078
F3 2.00
2.40 0.078
0.094
F4 3.00
3.40 0.118
0.133
G
10.90
0.429
H 15.45
15.75 0.608
0.620
L 19.85
20.15 0.781
0.793
L1
3.70
4.30 0.145
0.169
L2
18.50
0.728
L3 14.20
14.80 0.559
0.582
L4
34.60
1.362
L5
5.50
0.216
M
2.00
3.00 0.078
0.118
V
5°
5°
V2
60°
60°
Dia. 3.55
3.65 0.139
0.143
V
V
Dia.
H
A
L5
L
L2 L4
F2
F3
V2
F(x3)
G
=
=
M
E
F4
L3
F1
L1
D
5/8
京公网安备 11010802033920号
EEWORLD
