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SB80-09

Description
8 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB
CategoryDiscrete semiconductor    diode   
File Size72KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

SB80-09 Overview

8 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB

SB80-09 Parametric

Parameter NameAttribute value
Parts packaging codeTO-220AB
package instructionR-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationPOWER
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current80 A
Number of components2
Phase1
Number of terminals3
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage90 V
Maximum reverse current300 µA
Maximum reverse recovery time0.04 µs
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
Ordering number:EN2686A
SB80-09
Schottky Barrier Diode (Twin Type · Cathode Common)
90V, 8A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Package Dimensions
unit:mm
1159A
[SB80-09]
Features
· Low forward voltage (VF max=0.85V).
· Fast reverse recovery time (trr max=40ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
JEDEC:TO-220AB
EIAJ:SC-46
C:Cathode
A:Anode
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
Ratings
90
95
Unit
V
V
A
A
50Hz, resistive load, Tc=94˚C
50Hz sine wave, 1 cycle
8
80
–55 to +125
–55 to +125
˚C
˚C
Electrical Characteristics
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
trr
Rthj-c
Conditons
IR=1.5mA, Tj=25˚C, *
IF=3A, Tj=25˚C, *
VR=45V, Tj=25˚C, *
IF=2A, Tj=25˚C, *, –dIF/dt=10A/µs
Junction-Case:Smoothed DC
Ratings
min
90
0.85
0.3
40
3.0
typ
max
Unit
V
V
mA
ns
˚C/W
Note*:Value per element
Electrical Connection
A:Anode
C:Cathode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41098HA (KT)/2088TA, TS No.2686-1/3
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