Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD2093
DESCRIPTION
・With
TO-3PML package
・DARLINGTON
・Complement
to type 2SB1388
・High
DC current gain
・Low
saturation voltage
・Large
current capacity and large ASO
APPLICATIONS
・Motor
drivers
・Printer
hammer drivers
・Relay
drivers,
・Voltage
regulator control
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
DESCRIPTION
Maximum absolute ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
Collectorl power dissipation
3.0
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
110
100
6
10
15
45
W
UNIT
V
V
V
A
A
jh
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD2093
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
V
CEO(BR)
V
CBO(BR)
I
EBO
I
CBO
h
FE
f
T
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter cut-off current
Collector cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=5A;I
B
=10m A
I
C
=5A;I
B
=10m A
I
C
=5mA;I
B
=0
I
C
=50mA;R
BE
=∞
V
EB
=5V; I
C
=0
V
CB
=80V; I
E
=0
I
C
=5 A ; V
CE
=3V
I
C
=5 A ; V
CE
=5V
1500
4000
20
MHz
110
100
3.0
0.1
MIN
TYP.
0.9
2.0
MAX
UNIT
V
V
V
V
mA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=5A I
B1
=-I
B2
=10mA
V
CC
=50V ,R
L
=10Ω
0.6
4.8
1.6
μs
μs
μs
2