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2N3506U4E3

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size198KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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2N3506U4E3 Overview

Transistor

2N3506U4E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid114336115
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)40
JESD-609 codee4
Maximum operating temperature200 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)5 W
surface mountYES
Terminal surfaceGold (Au)
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