AUIRLR3110Z datasheet, PDF - EEWORLD Datasheet

AUIRLR3110Z: Description42 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA; Categorysemiconductor Discrete semiconductor; File Size1MB，13 Pages; ManufacturerKersemi Electronic; Websitehttp://www.kersemi.com

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42 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

Parameter Name	Attribute value
Number of terminals	2
Minimum breakdown voltage	100 V
Processing package description	ROHS COMPLIANT, PLASTIC, DPAK-3
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE TIN OVER NICKEL
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER
Maximum leakage current	42 A
Rated avalanche energy	110 mJ
Maximum drain on-resistance	0.0140 ohm
Maximum leakage current pulse	250 A

	AUIRLR3110Z	AUIRLU3110Z
Description	42 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	42 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Number of terminals	2	2
Minimum breakdown voltage	100 V	100 V
Processing package description	ROHS COMPLIANT, PLASTIC, DPAK-3	ROHS COMPLIANT, PLASTIC, DPAK-3
Lead-free	Yes	Yes
EU RoHS regulations	Yes	Yes
state	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR
Package Size	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes
Terminal form	GULL WING	GULL WING
terminal coating	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL
Terminal location	SINGLE	SINGLE
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN	DRAIN
Number of components	1	1
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Channel type	N-CHANNEL	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Maximum leakage current	42 A	42 A
Rated avalanche energy	110 mJ	110 mJ
Maximum drain on-resistance	0.0140 ohm	0.0140 ohm
Maximum leakage current pulse	250 A	250 A

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