V23990-K204-A-PM
datasheet
MiniSKiiP® 1 PIM
Features
●
Solderless interconnection
●
Trench Fieldstop IGBT3 technology
600V / 20A
MiniSKiiP
®
1 housing
Target Applications
●
Industrial drives
Schematic
Types
●
V23990-K204-A-PM
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
D8,D9,D10,D11,D12,D13
Repetitive peak reverse voltage
DC forward current
Surge forward current
I t-value
Power dissipation
Maximum Junction Temperature
2
V
RRM
I
FAV
I
FSM
It
P
tot
T
j
max
2
1600
T
j
=T
j
max
T
h
=80°
C
29
220
T
j
=25°
C
240
T
h
=80°
C
46
150
V
A
A
A
2
s
W
°
C
t
p
=10ms
half sine wave
T
j
=T
j
max
T1,T2,T3,T4,T5,T6,T7
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
h
=80°
C
600
24
60
59
±20
6
360
175
V
A
A
W
V
µs
V
C
°
copyright Vincotech
1
Revision: 3
V23990-K204-A-PM
datasheet
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
D1,D2,D3,D4,D5,D6,D7
Repetitive peak reverse voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
h
=80°
C
600
20
40
38
175
V
A
A
W
°
C
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
C
°
°
C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
V
mm
mm
copyright Vincotech
2
Revision: 3
V23990-K204-A-PM
datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
D8,D9,D10,D11,D12,D13
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
V
F
V
to
r
t
I
r
Thermal grease
thickness≤50um
λ
=1 W/mK
1500
25
25
25
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
1,51
1,42
0,86
0,79
0,03
0,03
0,05
V
V
mA
Thermal resistance chip to heatsink
R
thJH
1,5
K/W
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Thermal grease
thickness≤50um
λ
=1 W/mK
±15
300
20
Tj=25°
C
f=1MHz
0
25
Tj=25°
C
Rgoff=8
Rgon=16
V
CE
=V
GE
15
0
20
600
0
0,00029
15
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
5
1,1
5,8
1,87
2,04
6,5
1,9
0,14
350
V
V
mA
nA
Tj=25°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
-
28
26
30
35
225
245
79
117
0,72
0,86
0,46
0,59
ns
±15
300
20
mWs
1100
71
32
200
nC
pF
Thermal resistance chip to heatsink
R
thJH
1,6
K/W
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
20
diF/dt=tbd A/us
0
300
20
Erec
Thermal grease
thickness≤50um
λ
=1 W/mK
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
1,84
1,85
9,97
11,88
259
358
1,02
1,66
225
64
0,18
0,31
1,6
V
A
ns
µC
A/µs
mWs
Thermal resistance chip to heatsink
R
thJH
2,5
K/W
PTC
Rated resistance
Deviation of R100
R100
A-value
B-value
Vincotech NTC Reference
R
∆R/R
R
B(25/50) Tol. %
B(25/100) Tol. %
R100=1670
T=25°
C
T=100°
C
T=100°
C
T=25°
C
T=25°
C
-3
1670,313
7,635*10-3
1,731*10-5
E
1/K
1/K²
1000
3
%
copyright Vincotech
3
Revision: 3
V23990-K204-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
50
I
C
(A)
I
C
(A)
IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
50
IGBT
40
40
30
30
20
20
10
10
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
µs
250
25
°C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
250
µs
125
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
24
I
C
(A)
IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
50
I
F
(A)
FWD
20
40
T
j
= 25°
C
16
30
12
20
8
T
j
= T
jmax
-25°
C
10
4
T
j
= T
jmax
-25°
C
T
j
= 25°
C
0
0
2
4
6
8
10
V
GE
(V)
12
0
0
0,5
1
1,5
2
2,5
V
F
(V)
3
At
t
p
=
V
CE
=
250
10
µs
V
At
t
p
=
250
µs
copyright Vincotech
4
Revision: 3
V23990-K204-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I
C
)
2,5
E (mWs)
E (mWs)
IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R
G
)
2
IGBT
E
on High T
2
E
on High T
E
on Low T
E
on Low T
1,5
1,5
1
1
E
off High T
E
off Low T
0,5
E
off High T
E
off Low T
0,5
0
0
5
10
15
20
25
30
35
I
C
(A)
40
0
0
25
50
75
100
125
R
G
(
Ω
)
150
With an inductive load at
T
j
=
°C
25/125
V
CE
=
300
V
V
GE
=
15
V
R
gon
=
32
R
goff
=
16
With an inductive load at
T
j
=
°C
25/125
V
CE
=
300
V
V
GE
=
15
V
I
C
=
20
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E
rec
= f(I
C
)
0,4
E (mWs)
IGBT
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E
rec
= f(R
G
)
0,4
E (mWs)
IGBT
E
rec
T
j
= T
jmax
-25°
C
0,3
0,3
T
j
= T
jmax
-25°
C
E
rec
0,2
E
rec
0,2
T
j
= 25°
C
T
j
= 25°
C
E
rec
0,1
0,1
0
0
10
20
30
I
C
(A)
40
0
0
25
50
75
100
125
R
G
(
Ω
)
150
With an inductive load at
T
j
=
°C
25/125
V
CE
=
300
V
V
GE
=
15
V
R
gon
=
32
With an inductive load at
T
j
=
25/125
°C
V
CE
=
300
V
V
GE
=
15
V
I
C
=
20
A
copyright Vincotech
5
Revision: 3
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