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BU808

Description
8 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-218
Categorysemiconductor    Discrete semiconductor   
File Size216KB,7 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

BU808 Overview

8 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-218

BU808 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current8 A
Maximum Collector-Emitter Voltage700 V
Processing package descriptionISOWATT218, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingNOT SPECIFIED
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureDarlington WITH BUILT-IN diode AND resistor
Shell connectionisolation
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Transistor typeuniversal power supply
Minimum DC amplification factor60

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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