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JCT1031

Description
SCR Chip
File Size213KB，2 Pages
ManufacturerJie Jie Semiconductor
Websitehttp://www.jiejie-cn.com/
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JCT1031 Overview

SCR Chip

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JCT1031/JCT1231
型
标
准单向晶闸管芯片
○ 芯片特征：
双面台面结构（Double
Mesa）
，
台面玻璃钝化工艺，
背面三层金属电极。
○ 芯片尺寸：4.5mm×4.5mm
○ 主要用途：
○ 可替换型号：
○ 器件线路符号：
结温范围
断态重复峰值电压
反向重复峰值电压
通态均方根电流
通平均电流
通态浪涌电流
I
2
t
值
T
C
=80℃
T
C
=80℃
tp=10mS
tp=10mS
参数名称
符号
Tj
V
DRM
V
RRM
I
T
（
RMS
）
I
T
（
AV
）
I
TSM
I
2
t
dI/dt
（芯片代码：CP057）
○产品极限参数
（封装成
TO-220
后，除非另有规定，T
CASE
=25℃）
数
值
单½
℃
V
V
A
A
A
A
2
S
A/uS
-40½125
1000/1200
1000/1200
31
20
310
480
100
A
G
K
通态电流临界上升率
I
G
=2×I
GT
,tr≤100nS,
Tj=125℃
门极峰值电流
门极平均功率
Tj=125℃
Tj=125℃
I
GM
P
G
（
AV
）
4
1
A
W
○
产品电性½
（封装成
TO-220
后，除非另有规定，T
CASE
=25℃）
○ 芯片结构图：
特性和测试条件
通态峰值电压
JCT1031 芯片结构图
（单½：um)
符号
V
TM
数
值
单½
V
uA
mA
uA
mA
mA
mA
mA
V
V
≤1.7
≤100
≤10
≤100
≤10
15-60
≤120
≤100
≤1.5
≥0.25
I
T
=45A, tp=380uS
断态峰值电流
V
D
=V
DRM
反向峰值电流
V
R
=V
RRM
门极触发电流
V
D
=12V, R
L
=30Ω
T
C
=25℃
T
C
=125℃
T
C
=25℃
T
C
=125℃
I
DRM1
I
DRM2
I
RRM1
I
RRM2
I
GT
I
L
I
H
V
GT
V
GD
K
G
擎½电流
维持电流
I
G
=1.2 I
GT
I
T
=500mA
门极触发电压
G
K
V
D
=12V, R
L
=30Ω
门极不触发电压
V
D
=V
DRM
,Tj=125℃,
R
L
=3.3KΩ
断态电压临界上升率
V
D
=2/3V
DRM
, Tj=125℃,
门极开路
dV/dt
≥1000
V/uS
A(Ti-Ni-Ag)

JCT1031 Related Products

JCT1031 JCT1231
Description SCR Chip SCR Chip

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