RCX200N20
Nch 200V 20A Power MOSFET
Outline
Datasheet
V
DSS
R
DS(on)
(Max.)
I
D
P
D
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
200V
130m
20A
48W
TO-220FM
(1) (2)
(3)
Inner
circuit
(1) Gate
(2) Drain
(3) Source
1
BODY DIODE
∗1
(1)
(2)
(3)
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
Packaging
specifications
Packaging
Application
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
Type
Basic ordering unit (pcs)
Taping code
Marking
Absolute
maximum ratings(T
a
= 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
Power dissipation
Junction temperature
Range of storage temperature
T
c
= 25°C
T
a
= 25°C
T
c
= 25°C
T
c
= 100°C
Symbol
V
DSS
I
D *1
I
D *1
I
D,pulse
V
GSS
E
AS *3
I
AR
*3
*2
Bulk
-
-
500
-
RCX200N20
Reel size (mm)
Tape width (mm)
Value
200
20
10.8
80
30
32.3
10
48
2.23
150
55
to
150
Unit
V
A
A
A
V
mJ
A
W
W
°C
°C
P
D
P
D
T
j
T
stg
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© 2015 ROHM Co., Ltd. All rights reserved.
1/12
2016.02 - Rev.B
RCX200N20
Thermal
resistance
Values
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
Symbol
Min.
R
thJC
R
thJA
T
sold
-
-
-
Typ.
-
-
-
Data Sheet
Unit
Max.
2.57
56
265
°C/W
°C/W
°C
Electrical
characteristics(T
a
= 25°C)
Values
Parameter
Drain - Source breakdown voltage
Symbol
V
(BR)DSS
Conditions
Min.
V
GS
= 0V, I
D
= 1mA
V
DS
= 200V, V
GS
= 0V
-
-
25
200
Typ.
-
Max.
-
Unit
V
Zero gate voltage drain current
I
DSS
T
j
= 25°C
V
DS
= 200V, V
GS
= 0V
-
T
j
= 125°C
-
-
-
100
220
9.8
100
100
5.0
130
A
Gate - Source leakage current
Gate threshold voltage
I
GSS
V
GS (th)
V
GS
=
30V,
V
DS
= 0V
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 10A
-
3.0
-
-
4.9
nA
V
Static drain - source
on - state resistance
R
DS(on) *4
V
GS
= 10V, I
D
= 10A
T
j
= 125°C
m
310
-
S
Forward transfer admittance
g
fs
V
DS
= 10V, I
D
= 10A
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© 2015 ROHM Co., Ltd. All rights reserved.
2/12
2016.02 - Rev.B
RCX200N20
Electrical
characteristics(T
a
= 25°C)
Values
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r *4
t
d(off)
t
f
*4
*4
*4
Data Sheet
Conditions
Min.
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
DD
⋍
100V, V
GS
= 10V
I
D
= 10A
R
L
= 10
R
G
= 10
-
-
-
-
-
-
-
Typ.
1900
120
70
35
100
60
45
Max.
-
-
-
-
-
Unit
pF
ns
-
-
Gate
Charge characteristics(T
a
= 25°C)
Values
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Symbol
Q
g
*4
Conditions
Min.
V
DD
⋍
100V
I
D
= 10A
V
GS
= 10V
V
DD
⋍
100V, I
D
= 10A
-
-
-
-
Typ.
40
15
15
8.0
Max.
-
-
-
-
Unit
Q
gs *4
Q
gd
*4
nC
V
(plateau)
V
Body
diode electrical characteristics
(Source-Drain)(T
a
= 25°C)
Values
Parameter
Continuous source current
Pulsed source current
Forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
I
S
I
SM
V
SD
t
rr
*1
*2
*4
Conditions
Min.
-
T
c
= 25°C
-
V
GS
= 0V, I
S
= 20A
I
S
= 10A
di/dt = 100A/s
-
-
-
-
-
100
350
80
1.5
-
-
Typ.
-
Max.
20
Unit
A
A
V
ns
nC
*4
*4
Q
rr
*1 Limited only by maximum temperature allowed.
*2 Pw
10s, Duty cycle
1%
*3 L
⋍
500H, V
DD
= 50V, Rg = 25, starting T
j
= 25°C
*4 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved.
3/12
2016.02 - Rev.B
RCX200N20
Electrical
characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
120
Fig.2 Maximum Safe Operating Area
1000
T
a
=25ºC
Single Pulse
100
P
W
= 100s
Power Dissipation : P
D
/P
D
max. [%]
100
80
60
40
20
0
0
25
50
75
100
125
150
175
Drain Current : I
D
[A]
10
P
W
= 1ms
1
Operation in this
area is limited
by R
DS(on)
P
W
= 10ms
0.1
0.01
0.1
1
10
100
1000
Junction Temperature : T
j
[°C]
Drain - Source Voltage : V
DS
[V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r
(t)
10
T
a
=25ºC
Single Pulse
R
th(j-c)(t)
= r
(t)
×R
th(ch-c)
R
th(j-c)
= 56ºC/W
1
0.1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.01
0.0001
0.01
1
100
Pulse Width : P
W
[s]
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© 2015 ROHM Co., Ltd. All rights reserved.
4/12
2016.02 - Rev.B
RCX200N20
Electrical
characteristic curves
Data Sheet
Fig.4 Avalanche Current vs Inductive Load
100
Fig.5 Avalanche Energy Derating Curve
vs Junction Temperature
120
Avalanche Energy : E
AS
/ E
AS
max. [%]
Avalanche Current : I
AS
[A]
V
DD
=50V,R
G
=25
V
GF
=10V,V
GR
=0V
Starting T
ch
=25ºC
10
100
80
60
40
20
0
0
25
50
75
100
125
150
175
1
0.1
0.01
0.1
1
10
100
Coil Inductance : L [mH]
Junction Temperature : T
j
[°C]
Fig.6 Typical Output Characteristics(I)
5
4.5
4
T
a
=25ºC
Pulsed
V
GS
=10.0V
V
GS
=8.0V
V
GS
=7.0V
Fig.7 Typical Output Characteristics(II)
20
18
16
V
GS
=10.0V
V
GS
=8.0V
T
a
=25ºC
Pulsed
Drain Current : I
D
[A]
Drain Current : I
D
[A]
3.5
3
2.5
2
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1
V
GS
=6.0V
V
GS
=5.5V
V
GS
=6.5V
14
12
10
8
6
4
2
0
0
2
4
6
V
GS
=7.0V
V
GS
=6.5V
V
GS
=6.0V
V
GS
=5.5V
8
10
Drain - Source Voltage : V
DS
[V]
Drain - Source Voltage : V
DS
[V]
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© 2015 ROHM Co., Ltd. All rights reserved.
5/12
2016.02 - Rev.B
Test/Measurement
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