JCT1231 datasheet, PDF - EEWORLD Datasheet

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JCT1231: DescriptionSCR Chip; File Size213KB，2 Pages; ManufacturerJie Jie Semiconductor; Websitehttp://www.jiejie-cn.com/

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JCT1231 Overview

SCR Chip

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JCT1031/JCT1231

型

标

准单向晶闸管芯片

○ 芯片特征：

双面台面结构（Double

Mesa）

，

台面玻璃钝化工艺，

背面三层金属电极。

○ 芯片尺寸：4.5mm×4.5mm

○ 主要用途：

○ 可替换型号：

○ 器件线路符号：

结温范围

断态重复峰值电压

反向重复峰值电压

通态均方根电流

通平均电流

通态浪涌电流

值

=80℃

tp=10mS

参数名称

符号

DRM

RRM

（

RMS

）

（

）

TSM

dI/dt

（芯片代码：CP057）

○产品极限参数

（封装成

TO-220

后，除非另有规定，T

CASE

=25℃）

数

值

单½

℃

A/uS

-40½125

1000/1200

310

480

100

通态电流临界上升率

=2×I

,tr≤100nS,

Tj=125℃

门极峰值电流

门极平均功率

Tj=125℃

（

）

○

产品电性½

（封装成

TO-220

后，除非另有规定，T

CASE

=25℃）

○ 芯片结构图：

特性和测试条件

通态峰值电压

JCT1031 芯片结构图

（单½：um)

符号

数

值

单½

≤1.7

≤100

≤10

≤100

≤10

15-60

≤120

≤100

≤1.5

≥0.25

=45A, tp=380uS

断态峰值电流

DRM

反向峰值电流

RRM

门极触发电流

=12V, R

=30Ω

=25℃

=125℃

=25℃

=125℃

DRM1

DRM2

RRM1

RRM2

擎½电流

维持电流

=1.2 I

=500mA

门极触发电压

=12V, R

=30Ω

门极不触发电压

DRM

,Tj=125℃,

=3.3KΩ

断态电压临界上升率

=2/3V

DRM

, Tj=125℃,

门极开路

dV/dt

≥1000

V/uS

A(Ti-Ni-Ag)

JCT1231 Related Products

	JCT1231	JCT1031
Description	SCR Chip	SCR Chip

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