|
MTB40N10E |
MTB40N10ET4 |
Description |
NâChannel Power MOSFET |
NâChannel Power MOSFET |
Is it Rohs certified? |
incompatible |
incompatible |
Maker |
ON Semiconductor |
ON Semiconductor |
package instruction |
D2PAK-3 |
D2PAK-3 |
Contacts |
3 |
3 |
Reach Compliance Code |
_compli |
_compli |
ECCN code |
EAR99 |
EAR99 |
Avalanche Energy Efficiency Rating (Eas) |
800 mJ |
800 mJ |
Shell connection |
DRAIN |
DRAIN |
Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage |
100 V |
100 V |
Maximum drain current (Abs) (ID) |
40 A |
40 A |
Maximum drain current (ID) |
40 A |
40 A |
Maximum drain-source on-resistance |
0.04 Ω |
0.04 Ω |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JESD-30 code |
R-PSSO-G2 |
R-PSSO-G2 |
JESD-609 code |
e0 |
e0 |
Humidity sensitivity level |
1 |
1 |
Number of components |
1 |
1 |
Number of terminals |
2 |
2 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Maximum operating temperature |
150 °C |
150 °C |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
Package form |
SMALL OUTLINE |
SMALL OUTLINE |
Peak Reflow Temperature (Celsius) |
NOT SPECIFIED |
235 |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
Maximum power dissipation(Abs) |
169 W |
169 W |
Maximum pulsed drain current (IDM) |
140 A |
140 A |
Certification status |
Not Qualified |
Not Qualified |
surface mount |
YES |
YES |
Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Terminal form |
GULL WING |
GULL WING |
Terminal location |
SINGLE |
SINGLE |
Maximum time at peak reflow temperature |
NOT SPECIFIED |
30 |
transistor applications |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |