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IRF6635PBF_15

Description
Ideal for CPU Core DC-DC Converters
File Size259KB,11 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet View All

IRF6635PBF_15 Overview

Ideal for CPU Core DC-DC Converters

PD - 97086
IRF6635PbF
IRF6635TRPbF
l
l
l
l
l
l
l
l
l
RoHs Compliant

Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible

Compatible with existing Surface Mount Techniques

DirectFET™ Power MOSFET
‚
Typical values (unless otherwise specified)
V
DSS
Q
g
tot
V
GS
Q
gd
17nC
R
DS(on)
Q
gs2
4.7nC
R
DS(on)
Q
oss
29nC
30V max ±20V max 1.3mΩ@ 10V 1.8mΩ@ 4.5V
Q
rr
48nC
V
gs(th)
1.8V
47nC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

SQ
SX
ST
MQ
MX
MT
DirectFET™ ISOMETRIC
Description
The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6635PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/
high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The
IRF6635PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
10
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
30
±20
32
25
180
250
200
25
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
10
20
30
40
50
ID = 25A
VDS = 24V
VDS = 15V
A
mJ
A
8
6
4
2
0
0
1
2
T J = 25°C
3
4
5
6
7
ID = 32A
T J = 125°C
8
9
10
60
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate-to-Source Voltage
Notes:

Click on this section to link to the appropriate technical paper.
‚
Click on this section to link to the DirectFET Website.
ƒ
Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2.
Total Gate Charge vs. Gate-to-Source Voltage
„
T
C
measured with thermocouple mounted to top (Drain) of part.
…
Repetitive rating; pulse width limited by max. junction temperature.
†
Starting T
J
= 25°C, L = 0.63mH, R
G
= 25Ω, I
AS
= 25A.
www.irf.com
1
5/3/06
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