^s.m.i-donductoi Lpiodueti, line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
•
•
•
•
8 A Continuous On-State Current
80 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
1
TO-220 P>IVCKAGE
(TOP\
NEW)
c
A c
•
Max I
GT
of 20 mA
;
2
3
<-•!<
;
o
VALUE
UNIT
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TIC116D
Repetitive peak off-state voltage
TIC116M
TIC116S
TIC116N
TIC116D
TIC116M
TIC116S
TIC116N
VRRM
VDRM
SYMBOL
Repetitive peak reverse voltage
400
600
700
800
400
600
700
800
8
5
80
3
5
1
V
V
Continuous on-state current at (or below) 70°C case temperature (see Note 1)
Average on-state current (180° conduction angle) at (or below) 70°C case temperature
(see Note 2)
Surge on-state current at (or below) 25°C case temperature (see Note 3)
Peak positive gate current (pulse width < 300 us)
Peak gate power dissipation (pulse width < 300 us)
Average gate power dissipation (see Note 4)
Operating case temperature range
Storage temperature range
Lead temperature 1 .6 mm from case for 10 seconds
'T(RMS)
'T(AV)
A
A
A
A
W
W
°C
ITM
'QM
P
GM
P
G(AV)
TC
T
stg
-40to+110
-4010+125
230
T
L
°c
°c
NOTES: 1 . These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 1 1 0°C.
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate
linearly to zero at 110°C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4, This value applies for a maximum averaging time of 20 ms.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
electrical characteristics at
25°C
case temperature (unless otherwise noted)
PARAMETER
DRM
TEST CONDITIONS
V
D
= rated V
DRM
V
R
= rated V
RRM
V
AA
= 12V
V
AA
=12V
tp(g) £ 20
M
S
I
G
= 0
R
L
= 100 n
R
L
= 100 Q
T
C
= 110°C
T
0
= 110'C
t
p
(g)
£ 2 0
^
s
T
C
= -40°C
MIN
TYP
MAX
2
2
UNIT
mA
mA
mA
I
GT
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
8
20
2.5
V
GT
Gate trigger voltage
V
AA
= 12V
tp(g) ^ 20 MS
R
L
= 100 n
R
L
= 100n
T
C
= 110°C
T
C
= -40°C
0.2
0.8
1.5
V
V
AA
= 12V
tp(g) a 20 MS
V
AA
= 12V
Initiating I
T
= 100 mA
V
AA
= 12V
Initiating IT = 100mA
T
100
I
H
Holding current
mA
40
dv/dt
NOTE
On-state
voltage
Critical rate of rise of
off-state voltage
IT = 8 A
V
D
= rated V
D
(see Note 5)
I
G
= 0
T
c
= 1 10°C
400
1.7
V
V/MS
5: This parameter must be measured using pulse techniques, t
p
= 300 us, duty cycle < 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
PARAMETER
R
ejc
ROJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
3
UNIT
°c/w
"C/W
62.5
RF/Wirelessly
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