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TF252

Description
JFET N-CH 1MA 30MW USFP
Categorysemiconductor    Discrete semiconductor   
File Size330KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet View All

TF252 Overview

JFET N-CH 1MA 30MW USFP

Ordering number : ENA0841B
TF252
N-Channel JFET
20V, 140 to 350
μ
A, 1.4mS, USFP
Features
http://onsemi.com
High gain : GV=1.0dB typ (VCC=2V, RL=2.2k
Ω
, Cin=5pF, VIN=10mV, f=1kHz)
Ultrasmall package facilitates miniaturization in end products [1.0mm
×
0.6mm
×
0.27mm (max 0.3mm)]
Best suited for use in Electret Condenser Microphone for audio equipments and telephones
Excellent voltage characteristics
Excellent transient characteristics
Adoption of FBET process
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Conditions
Ratings
--20
10
1
30
150
--55 to +150
Unit
V
mA
mA
mW
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7055-001
0.6
0.1
3
0.2
0.11
0 to 0.02
Product & Package Information
• Package
: USFP
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 10,000 pcs./reel
TF252-4-TL-H
TF252-5-TL-H
Packing Type: TL
Marking
3
LOT No.
LOT No.
1.0
0.8
0.1
1
2
TL
0.175
0.15
D
Electrical Connection
0.27
1
2
0.05
1
1
2
1 : Drain
2 : Source
3 : Gate
USFP
3
0.05
3
2
Semiconductor Components Industries, LLC, 2013
August, 2013
O1012 TKIM/92612 TKIM/70407GB TIIM TC-00000793 No. A0841-1/7
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