UNR212X datasheet, PDF - EEWORLD Datasheet

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UNR212X: DescriptionComposite Device - Transistors with built-in Resistor; CategoryDiscrete semiconductor The transistor; File Size141KB，7 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html; Environmental Compliance

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UNR212X Overview

Composite Device - Transistors with built-in Resistor

UNR212X Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Panasonic
Parts packaging code	SC-59
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO 18.52
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	20
JESD-30 code	R-PDSO-G3
JESD-609 code	e6
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Bismuth (Sn/Bi)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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Transistors with built-in Resistor

UNR212x Series

(UN212x Series)

Silicon PNP epitaxial planar type

Unit: mm

For digital circuits

■

Features

•

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

•

Mini type package allowing easy automatic insertion through tape

packing and magazine packing

0.40

+0.10

–0.05

1.50

+0.25

–0.05

2.8

+0.2

–0.3

0.16

+0.10

–0.06

(0.65)

(0.95) (0.95)

1.9

±0.1

2.90

+0.20

–0.05

■

Resistance by Part Number

•

UNR2121

•

UNR2122

•

UNR2123

•

UNR2124

•

UNR212X

•

UNR212Y

Marking Symbol (R

)

(UN2121)

2.2 kΩ

(UN2122)

4.7 kΩ

(UN2123)

10 kΩ

(UN2124)

2.2 kΩ

(UN212X)

0.27 kΩ

(UN212Y)

3.1 kΩ

)

2.2 kΩ

4.7 kΩ

10 kΩ

5 kΩ

4.6 kΩ

10˚

1.1

+0.2

–0.1

1.1

+0.3

–0.1

1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package

Internal Connection

■

Absolute Maximum Ratings

25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector current

Total power dissipation

Junction temperature

Storage temperature

Symbol

CBO

CEO

stg

Rating

−50

−500

200

150

−55

+150

Unit

°C

■

Electrical Characteristics

25°C

3°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

UNR212X

Collector-emitter cutoff current (Base open)

UNR212X

Emitter-base

UNR2121

EBO

= −6

V, I

CEO

= −50

V, I

Symbol

CBO

CEO

CBO

Conditions

= −10 µA,

= −2

mA, I

= −50

V, I

Min

−50

−1.0

−

0.1

−1.0

−

0.5

−5

−2

−1

= −10

V, I

= −5

Note) The part numbers in the parenthesis show conventional part number.

Publication date: December 2003

SJH00008CED

Typ

0 to 0.1

Max

Unit

µA

cutoff current UNR2122/212X/212Y

(Collector open) UNR2123/2124

Forward current UNR2121

transfer ratio

UNR2122/212Y

UNR2123/2124

UNR212X



0.4

±0.2

5˚

UNR212X Related Products

	UNR212X	UNR2121	UNR2123	UNR2124	UNR212Y
Description	Composite Device - Transistors with built-in Resistor	Composite Device - Transistors with built-in Resistor	Composite Device - Transistors with built-in Resistor	Composite Device - Transistors with built-in Resistor	Composite Device - Transistors with built-in Resistor
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Maker	Panasonic	Panasonic	Panasonic	Panasonic	Panasonic
Parts packaging code	SC-59	SC-59	SC-59	SC-59	SC-59
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO 18.52	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO 4.54	BUILT IN BIAS RESISTOR RATIO 1.48
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	20	40	60	60	50
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e6	e6	e6	e6	e6
Humidity sensitivity level	1	1	1	1	1
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal surface	Tin/Bismuth (Sn/Bi)	Tin/Bismuth (Sn/Bi)	Tin/Bismuth (Sn/Bi)	Tin/Bismuth (Sn/Bi)	Tin/Bismuth (Sn/Bi)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz

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