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IRF150

Description
27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size144KB,4 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Environmental Compliance  
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IRF150 Overview

27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN

IRF150 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Objectid2114854444
package instructionCHIP CARRIER, R-CBCC-N3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL5.82
Avalanche Energy Efficiency Rating (Eas)150 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)27 A
Maximum drain-source on-resistance0.081 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CBCC-N3
JESD-609 codee4
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)108 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal locationBOTTOM
Transistor component materialsSILICON
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
IRF150/151/152/153
FEATURES
LOW RoS(on)
Improved Inductive ruggedness
Fast switching times •
Rugged polyslllcon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3 package (High current)
TO-3
N-CHANNEL
POWER MOSFETS
PRODUCT SUMMARY
Part Number
IRF1
50
Vos
100V
60V
100V
60V
Rosion)
0.0550
0.055Q
0.080
0.08 0
ID
40A
40A
33A
33A
IHF151
IRF152
IHF153
MAXIMUM RATINGS
Characteristic
Drain-Source Voltage (1)
Drain-Gate Voltage (Ros= 1 .OMO) (1 )
Gate-Source Voltage
Continuous Drain Current Tc~25
c
C
Continuous Drain Current T
C
-=100°C
Drain Current— Pulsed (3)
Gate Current— Pulsed
Total Power Dissipation © Tc=25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range
Maximum Lead Temp, (or Soldering
Purposes. 1/8" from case for 5 seconds
Symbol
Voss
VDQR
VQS
IRF150
IRF1S1
IRF152
IRF163
Unit
100
100
40
25
160
60
60
±20
40
25
160
±1.5
100
100
33
20
132
60
60
33
20
132
Vdc
Vdc
Vdc
Ado
Adc
Adc
Adc
Watts
VWC
lo
to
(DM
low
Po
160
1.2
-55 to 150
300
Tj, Tstg
»c
»c
T
L
Notes: (1) Tj-25''C to 150°C
(2) Pulse test: Pulse width<300ps, Duty Cyc!e<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

IRF150 Related Products

IRF150 IRF152 IHF151 IHF153
Description 27A, 100V, 0.081ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN 30A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AE, TO-204AE, 2 PIN 38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE 38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
Shell connection DRAIN DRAIN DRAIN DRAIN
Number of components 1 1 1 1
Number of terminals 3 2 2 2
Terminal form NO LEAD PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON silicon silicon
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