20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
IRF150/151/152/153
FEATURES
LOW RoS(on)
Improved Inductive ruggedness
Fast switching times •
Rugged polyslllcon gate cell structure
Low input capacitance
Extended safe operating area
Improved high temperature reliability
TO-3 package (High current)
TO-3
N-CHANNEL
POWER MOSFETS
PRODUCT SUMMARY
Part Number
IRF1
50
Vos
100V
60V
100V
60V
Rosion)
0.0550
0.055Q
0.080
0.08 0
ID
40A
40A
33A
33A
IHF151
IRF152
IHF153
MAXIMUM RATINGS
Characteristic
Drain-Source Voltage (1)
Drain-Gate Voltage (Ros= 1 .OMO) (1 )
Gate-Source Voltage
Continuous Drain Current Tc~25
c
C
Continuous Drain Current T
C
-=100°C
Drain Current— Pulsed (3)
Gate Current— Pulsed
Total Power Dissipation © Tc=25°C
Derate above 25°C
Operating and Storage
Junction Temperature Range
Maximum Lead Temp, (or Soldering
Purposes. 1/8" from case for 5 seconds
Symbol
Voss
VDQR
VQS
IRF150
IRF1S1
IRF152
IRF163
Unit
100
100
40
25
160
60
60
±20
40
25
160
±1.5
100
100
33
20
132
60
60
33
20
132
Vdc
Vdc
Vdc
Ado
Adc
Adc
Adc
Watts
VWC
lo
to
(DM
low
Po
160
1.2
-55 to 150
300
Tj, Tstg
»c
»c
T
L
Notes: (1) Tj-25''C to 150°C
(2) Pulse test: Pulse width<300ps, Duty Cyc!e<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRF150/151/152/153
ELECTRICAL CHARACTERISTICS <T
0
=25°C unless otherwise specified)
Characteristic
Symbol
Type
Mln Typ
-.
-
—
-
—
-
_
N-CHANNEL
POWER MOSFETS
Max
Units
-'
-
4.0
100
-100
Test Conditions
Voa-OV
lo-250pA
VDS-VGS.
to=250(iA
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
•
IRF150
100
IRF162
BVoss
IRF1S1
60
IRF153
ALL
ALL
ALL
ALL
2.0
-
-
-
-
V
V
V
Vosw)
loss
loss
IDSS
Gate-Source Leakage Forward
Gate-Source Leakage Reverse
Zero Gate Voltage
Drain Current
nA
V
QS
-20V
nA
Vos=-20V
MA
Vos-Max. Rating, Vas-OV
H
A
250
1000
Vus-Max. RatingXO.B, Vos-OV,
T
C
=125''C
On-State Drain-Source
Current (2)
IRF160
40
IRF151
Irjfon)
-
-
-'
-
A
VoS>ltXon)X RDS(Mi)
ma..
VQS= 1 0V
IRF152
33
IRF153
A
0
Static Drain-Source On-State
Rosion)
Resistance (2)
IRF1
62
-
0.06
IRF163
Forward Transconductance (2)
nput Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
'Gale-Source Plus Gate-Drain)
Gate-Source Charge
Gate-Drain ("Miller") Charge
Sr»
CB,
IRF150
-
0,04
IRF151
o.oss
0.06
—
Vos=10V, I
0
-20A
0
0
PF
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
9.0
12.3
_
—
-
-
—
-
-
-
-
VDS>l(Xon)XRDS(on| ">"••
to
=
20A
-
2900 3000
1050
COM
Cnu
tdfCW)
1500
PF
Vos=OV, Vos=25V, f-t.OMHz
500
35
100
126
100
120
-
-
PF
450
—
-
—
-
72
18
54
ns
ns
ns
ns
nC
Ves-10V, ID-SOA, Vos-O.8 Max. Rating
(Gate charge la essentially Independent of
nC
operating temperature. )
nC
VDD=O.SBV(>ss, lo-ZOA, Zo=4,70
(MOSFET switching times are essentially
Independent of operating temperature. )
t
r
td(oH)
tf
a
a
OB,
God
THERMAL RESISTANCE
Junction-to-Case
Case-to-SInk
Junctlon-to- Ambient
Rttvic
R»cs
RttlJA
ALL
ALL
ALL
—
—
-
—
0.1
-
0.83
—
30
K/W
«yw
Mounting surface flat, smooth, and greased
K/W
Free Air Operation
Notes: (1) Tj-26°C to 150°C
(2) Pulse test: Pulse widthOOOpS, Duty Cycled2% .
(3) Repetitive rating: Pulse width limited by
max.
junction temperature
IRF150/151/152/153
N-CHANNEL
POWER MOSFETS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
'
Characteristic
Symbol Type
Mln
Typ
—
-
-
-
-
-
Max
Units
40
33
160
132
2.5
2.3
A
A
A
A
V
V
Test Condition*
Continuous Source Current
(Body Diode)
Is
Pulse Source Current
(Body Diode) (3)
ISM
Diode Forward Voltage (2)
*
t,,
IRF150
IRF151
IRF152
IRF163
IRF160
IRF151
IRF152
IRF163
IRF150
IRF161
IRF152
IRF153
-
-
-
-
-
-
Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier
•4$
Tc-25°C, ls=40A, Vos-OV
Tc=25°C, I
S
-33A, Ves-OV
-
ALL
- 600
ns
Tj=150°C, lF=40A, dlF/dt=100A/|iS
Notes: (1) Tj-25°C to 150°C (2) Pulse test: Pulse widthOOOps, Duty Cycle<2%
(3) Repetitive rating: Pulse width limited by max. junction temperature
Reverse Recovery Time
10
20
30
40
SO
Vos. CRAIN-TO-SOURCE VOLTAGE (VOLTE)
Typical Output Characteristics
2
3
4
6
6
Vos, OATE-7O-SOURCE VOLTAGE (VOLTS)
Typical Transfer Characteristics
7
'jpfl
""7
,
URATKM
LKJTlOB
l_U_Ll
Iff
8
! !! —
ISH
. . i .—ik
l
V
^'
•
'j^H
1
1
0
•
;
a.
2
V
\3
- ^ ' 1M
0
t
.,—
>*-,Jpui
srr-—
JJ
-
looms
•'DC'
IWI60
2
1000
0.4
08
12
16
20
1.0
Vos. DRAIH-TO-SOURCE VOLTABE (VOLTS)
Typical Saturation Characterljllcs
5
10 20
50 100 200
600
Vgj. DRAIN-TO-SOURCE VOLTAOE (VOLTS)
Maximum Sat* Operating AIM
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