MD51C67-45 datasheet, PDF - EEWORLD Datasheet

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MD51C67-45: DescriptionStandard SRAM, 16KX1, 45ns, CMOS, CDIP20; Categorystorage storage; File Size249KB，5 Pages; ManufacturerIntel; Websitehttp://www.intel.com/

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MD51C67-45 Overview

Standard SRAM, 16KX1, 45ns, CMOS, CDIP20

MD51C67-45 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	1435196450
package instruction	DIP, DIP20,.3
Reach Compliance Code	compliant
ECCN code	3A001.A.2.C
Maximum access time	45 ns
I/O type	SEPARATE
JESD-30 code	R-XDIP-T20
JESD-609 code	e0
memory density	16384 bit
Memory IC Type	STANDARD SRAM
memory width	1
Number of terminals	20
word count	16384 words
character code	16000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	16KX1
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP20,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.01 A
Minimum standby current	4.5 V
Maximum slew rate	0.1 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

MD51C67-45 Related Products

	MD51C67-45	D51C66-35L	D51C66-35	D51C66-25	D51C66-30
Description	Standard SRAM, 16KX1, 45ns, CMOS, CDIP20	Standard SRAM, 16KX1, 35ns, CMOS, CDIP20	Standard SRAM, 16KX1, 35ns, CMOS, CDIP20	Standard SRAM, 16KX1, 25ns, CMOS, CDIP20	Standard SRAM, 16KX1, 30ns, CMOS, CDIP20
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	DIP, DIP20,.3	DIP, DIP20,.3	DIP, DIP20,.3	DIP, DIP20,.3	DIP, DIP20,.3
Reach Compliance Code	compliant	unknow	unknow	unknow	unknow
Maximum access time	45 ns	35 ns	35 ns	25 ns	30 ns
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-XDIP-T20	R-XDIP-T20	R-XDIP-T20	R-XDIP-T20	R-XDIP-T20
JESD-609 code	e0	e0	e0	e0	e0
memory density	16384 bit	16384 bi	16384 bi	16384 bi	16384 bi
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	1	1	1	1	1
Number of terminals	20	20	20	20	20
word count	16384 words	16384 words	16384 words	16384 words	16384 words
character code	16000	16000	16000	16000	16000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	70 °C	70 °C	70 °C	70 °C
organize	16KX1	16KX1	16KX1	16KX1	16KX1
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC
encapsulated code	DIP	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP20,.3	DIP20,.3	DIP20,.3	DIP20,.3	DIP20,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum slew rate	0.1 mA	0.06 mA	0.08 mA	0.08 mA	0.08 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Base Number Matches	-	1	1	1	-

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