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D51C66-35L

Description
Standard SRAM, 16KX1, 35ns, CMOS, CDIP20
Categorystorage    storage   
File Size249KB,5 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
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D51C66-35L Overview

Standard SRAM, 16KX1, 35ns, CMOS, CDIP20

D51C66-35L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionDIP, DIP20,.3
Reach Compliance Codeunknow
Maximum access time35 ns
I/O typeSEPARATE
JESD-30 codeR-XDIP-T20
JESD-609 codee0
memory density16384 bi
Memory IC TypeSTANDARD SRAM
memory width1
Number of terminals20
word count16384 words
character code16000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16KX1
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeDIP
Encapsulate equivalent codeDIP20,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Maximum slew rate0.06 mA
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Base Number Matches1

D51C66-35L Related Products

D51C66-35L D51C66-35 D51C66-25 D51C66-30 MD51C67-45
Description Standard SRAM, 16KX1, 35ns, CMOS, CDIP20 Standard SRAM, 16KX1, 35ns, CMOS, CDIP20 Standard SRAM, 16KX1, 25ns, CMOS, CDIP20 Standard SRAM, 16KX1, 30ns, CMOS, CDIP20 Standard SRAM, 16KX1, 45ns, CMOS, CDIP20
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
package instruction DIP, DIP20,.3 DIP, DIP20,.3 DIP, DIP20,.3 DIP, DIP20,.3 DIP, DIP20,.3
Reach Compliance Code unknow unknow unknow unknow compliant
Maximum access time 35 ns 35 ns 25 ns 30 ns 45 ns
I/O type SEPARATE SEPARATE SEPARATE SEPARATE SEPARATE
JESD-30 code R-XDIP-T20 R-XDIP-T20 R-XDIP-T20 R-XDIP-T20 R-XDIP-T20
JESD-609 code e0 e0 e0 e0 e0
memory density 16384 bi 16384 bi 16384 bi 16384 bi 16384 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 1 1 1 1 1
Number of terminals 20 20 20 20 20
word count 16384 words 16384 words 16384 words 16384 words 16384 words
character code 16000 16000 16000 16000 16000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 125 °C
organize 16KX1 16KX1 16KX1 16KX1 16KX1
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material CERAMIC CERAMIC CERAMIC CERAMIC CERAMIC
encapsulated code DIP DIP DIP DIP DIP
Encapsulate equivalent code DIP20,.3 DIP20,.3 DIP20,.3 DIP20,.3 DIP20,.3
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
power supply 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum slew rate 0.06 mA 0.08 mA 0.08 mA 0.08 mA 0.1 mA
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL MILITARY
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL DUAL
Base Number Matches 1 1 1 - -

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