Standard SRAM, 16KX1, 35ns, CMOS, CDIP20
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
package instruction | DIP, DIP20,.3 |
Reach Compliance Code | unknow |
Maximum access time | 35 ns |
I/O type | SEPARATE |
JESD-30 code | R-XDIP-T20 |
JESD-609 code | e0 |
memory density | 16384 bi |
Memory IC Type | STANDARD SRAM |
memory width | 1 |
Number of terminals | 20 |
word count | 16384 words |
character code | 16000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 16KX1 |
Output characteristics | 3-STATE |
Package body material | CERAMIC |
encapsulated code | DIP |
Encapsulate equivalent code | DIP20,.3 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
power supply | 5 V |
Certification status | Not Qualified |
Maximum slew rate | 0.06 mA |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Base Number Matches | 1 |
D51C66-35L | D51C66-35 | D51C66-25 | D51C66-30 | MD51C67-45 | |
---|---|---|---|---|---|
Description | Standard SRAM, 16KX1, 35ns, CMOS, CDIP20 | Standard SRAM, 16KX1, 35ns, CMOS, CDIP20 | Standard SRAM, 16KX1, 25ns, CMOS, CDIP20 | Standard SRAM, 16KX1, 30ns, CMOS, CDIP20 | Standard SRAM, 16KX1, 45ns, CMOS, CDIP20 |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible |
package instruction | DIP, DIP20,.3 | DIP, DIP20,.3 | DIP, DIP20,.3 | DIP, DIP20,.3 | DIP, DIP20,.3 |
Reach Compliance Code | unknow | unknow | unknow | unknow | compliant |
Maximum access time | 35 ns | 35 ns | 25 ns | 30 ns | 45 ns |
I/O type | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
JESD-30 code | R-XDIP-T20 | R-XDIP-T20 | R-XDIP-T20 | R-XDIP-T20 | R-XDIP-T20 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 |
memory density | 16384 bi | 16384 bi | 16384 bi | 16384 bi | 16384 bit |
Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
memory width | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 20 | 20 | 20 | 20 | 20 |
word count | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
character code | 16000 | 16000 | 16000 | 16000 | 16000 |
Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 125 °C |
organize | 16KX1 | 16KX1 | 16KX1 | 16KX1 | 16KX1 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
encapsulated code | DIP | DIP | DIP | DIP | DIP |
Encapsulate equivalent code | DIP20,.3 | DIP20,.3 | DIP20,.3 | DIP20,.3 | DIP20,.3 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
power supply | 5 V | 5 V | 5 V | 5 V | 5 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum slew rate | 0.06 mA | 0.08 mA | 0.08 mA | 0.08 mA | 0.1 mA |
Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
surface mount | NO | NO | NO | NO | NO |
technology | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL |
Base Number Matches | 1 | 1 | 1 | - | - |