600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | EIC [EIC discrete Semiconductors] |
package instruction | R-PDSO-C2 |
Reach Compliance Code | _compli |
ECCN code | EAR99 |
Other features | EXCELLENT CLAMPING CAPABILITY, PRSM-MIN |
Maximum breakdown voltage | 58.4 V |
Minimum breakdown voltage | 47.8 V |
Breakdown voltage nominal value | 54.15 V |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95 code | DO-214AA |
JESD-30 code | R-PDSO-C2 |
JESD-609 code | e3 |
Maximum non-repetitive peak reverse power dissipation | 600 W |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -55 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
polarity | UNIDIRECTIONAL |
Maximum repetitive peak reverse voltage | 43 V |
surface mount | YES |
technology | AVALANCHE |
Terminal surface | Tin (Sn) |
Terminal form | C BEND |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |