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SMBJ43

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size112KB,4 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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SMBJ43 Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

SMBJ43 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionR-PDSO-C2
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Maximum breakdown voltage58.4 V
Minimum breakdown voltage47.8 V
Breakdown voltage nominal value54.15 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage43 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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