VESD05A6-HA3
Vishay Semiconductors
6-Line ESD-Protection Diode Array in LLP75
Features
Ultra compact LLP75-7A package
6-line ESD-protection
Low leakage current I
R
< 1 µA
Low load capacitance C
D
= 40 pF
ESD-immunity acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• Working voltage range V
RWM
= 5 V
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
•
•
•
•
•
6
7
5
4
1
19371
19369
2
3
Marking
(example only)
XX
YY
21001
Dot = Pin 1 marking
XX = Date code
YY = Type code (see table below)
Ordering Information
Device name
VESD05A6-HA3
Ordering code
VESD05A6-HA3-GS08
Taped units per reel
(8 mm tape on 7" reel)
3000
Minimum order quantity
15000
Package Data
Device name
VESD05A6-HA3
Package
name
LLP75-7A
Type
code
AF
Weight
5 mg
Molding
compound
flammability rating
UL 94 V-0
Moisture sensitivity level
Soldering conditions
MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
* Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902
Document Number 84707
Rev. 1.3, 19-Sep-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
1
VESD05A6-HA3
Vishay Semiconductors
Absolute Maximum Ratings
Rating
Peak pulse current
Peak pulse power
Test condition
BiAs-Mode: each input (pin 1 - pin 6) to ground (pin 2);
acc. IEC 61000-4-5; t
p
= 8/20 µs; single shot
BiAs-mode: each input (pin 1 - pin 6) to ground (pin 2);
acc. IEC 61000-4-5; t
p
= 8/20 µs; single shot
Acc. IEC61000-4-2; 10 pulses
BiAs-mode: each input (pin 1 - pin 6) to ground (pin 2)
Junction temperature
Contact
discharge
Air
discharge
Symbol
I
PPM
P
PP
V
ESD
V
ESD
T
J
T
STG
Value
5
60
± 30
± 30
- 40 to + 125
- 55 to + 150
Unit
A
W
kV
kV
°C
°C
ESD immunity
Operating temperature
Storage temperature
Application Note:
a) With the
VESD05A6-HA3
6 different signal or data lines can be clamped to ground. Due to the different
clamping levels in forward and reverse direction the
VESD05A6-HA3
clamping behavior is
Bidirectional
and
Asymmetrical (BiAs).
L1
L2
L3
6
7
5
4
1
2
3
L4
L5
19365
L6
b) If symmetrical clamping behaviour is required the
VESD05A6-HA3
can also be used as a
Bidirectional
Symmetrical
protection device protecting up to 5 lines. In this case pin no. 7 must not be connected.
L1
L2
L3
6
7
5
4
1
2
3
L4
L5
19366
www.vishay.com
2
For technical support, please contact: ESD-Protection@vishay.com
Document Number 84707
Rev. 1.3, 19-Sep-08
VESD05A6-HA3
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
VESD05A6-HA3
BiAs mode (between pin 1, 2, 3, 4, 5 or 6 and pin 7)
Parameter
Protection paths
Reverse stand off voltage
Max. reverse current
Reverse break down voltage
Reverse clamping voltage
at I
PP
= I
PPM
= 5 A
at I
PP
= 1 A
Forward clamping voltage
at I
PP
= I
PPM
= 5 A
at V
R
= 0 V; f = 1 MHz
Line capacitance
at V
R
= 2.5 V; f = 1 MHz
C
D
24
pF
V
F
C
D
3.2
40
4.5
50
V
pF
V
C
V
F
11.3
1.5
12
1.8
V
V
Test conditions/remarks
Number of lines which can be protected
at I
R
= 1 µA
at V
R
= 5 V
at I
R
= 1 mA
at I
PP
= 1 A
Symbol
N
lines
V
RWM
I
R
V
BR
V
C
6
5
< 0.1
6.6
8.1
1
7.5
10
Min.
Typ.
Max.
6
Unit
lines
V
µA
V
V
Typical Characteristics
T
amb
= 25
°C,
unless otherwise specified
120 %
Rise time = 0.7 ns to 1 ns
100 %
80
%
80
%
60 %
20
µs
to 50 %
40 %
20 %
0%
0
20548
8 µs
to 100 %
Discharge Current I
ESD
100 %
53 %
40 %
27 %
20 %
0%
- 10 0 10 20 30 40 50 60 70
80
90 100
20557
I
PPM
60 %
10
20
30
40
Time (ns)
Time (µs)
Figure 1. ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330
Ω/150
pF)
Figure 2. 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Document Number 84707
Rev. 1.3, 19-Sep-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
3
VESD05A6-HA3
Vishay Semiconductors
50
f = 1 MHz
40
16
Measured acc. IEC 61000-4-5 (8/20
µs
-
wave
form)
14
12
10
forward
reverse
C
D
(pF)
V
C
(V)
30
8
6
4
20
10
2
0
0
19358
V
C
0
1
2
3
4
5
19361
0
5
10
15
20
25
V
R
(V)
I
PP
(A)
Figure 3. Typical Capacitance C
D
vs. Reverse Voltage V
R
Figure 6. Typical Clamping Voltage vs. Peak Pulse Current I
PP
100
80
70
acc. IEC 61000-4-2
+
8
kV
contact discharge
10
60
50
V
C-ESD
(V)
I
F
(mA)
1
40
30
20
10
0.1
0.01
0
- 10
0.001
0.5
19359
0.6
0.7
0.8
0.9
1
- 20
- 10 0
19363
10 20 30 40 50 60 70
80
90
V
F
(V)
t (ns)
Figure 4. Typical Forward Current I
F
vs. Forward Voltage V
F
Figure 7. Typical Clamping Performance on + 8 kV - ESD Events
(acc. IEC 61000-4-2)
8
7
6
30
20
10
0
V
C-ESD
(V)
5
V
R
(V)
- 10
- 20
- 30
- 40
- 50
acc. IEC 61000-4-2
-
8
kV
contact discharge
4
3
2
1
0
0.01
0.1
1
10
100
1000
- 60
- 70
- 10 0
19362
10 20 30 40 50 60 70
80
90
19360
I
R
(µA)
t (ns)
Figure 5. Typical Reverse Voltage V
R
vs. Reverse Current I
R
Figure 8. Typical Clamping Performance on - 8 kV - ESD Events
(acc. IEC 61000-4-2)
www.vishay.com
4
For technical support, please contact: ESD-Protection@vishay.com
Document Number 84707
Rev. 1.3, 19-Sep-08
VESD05A6-HA3
Vishay Semiconductors
300
250
200
150
100
acc. IEC 61000-4-2
contact discharge
V
C-ESD
(V)
50
0
- 50
- 100
- 150
- 200
- 250
- 300
0
5
10
15
20
25
30
V
C-ESD
19364
V
ESD
(kV)
Figure 9. Typical max. Clamping Voltage at ESD Contact
Discharge (acc. IEC 61000-4-2)
Package Dimensions
in millimeters (inches):
LLP75-7A
20459
Document Number 84707
Rev. 1.3, 19-Sep-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
5
京公网安备 11010802033920号
EEWORLD
