Standard SRAM, 2KX8, 200ns, MOS, CDIP24
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Objectid | 101249059 |
package instruction | DIP, DIP24,.6 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Maximum access time | 200 ns |
I/O type | COMMON |
JESD-30 code | R-XDIP-T24 |
JESD-609 code | e0 |
memory density | 16384 bit |
Memory IC Type | STANDARD SRAM |
memory width | 8 |
Number of terminals | 24 |
word count | 2048 words |
character code | 2000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 2KX8 |
Output characteristics | 3-STATE |
Package body material | CERAMIC |
encapsulated code | DIP |
Encapsulate equivalent code | DIP24,.6 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
power supply | 5 V |
Certification status | Not Qualified |
Maximum slew rate | 0.1 mA |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | MOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
SYD2129-4 | SYC2129L-3 | SYD2129-3 | SYD2129L-3 | SYC2129-4 | SYC2129L-4 | SYD2129L-4 | |
---|---|---|---|---|---|---|---|
Description | Standard SRAM, 2KX8, 200ns, MOS, CDIP24 | Standard SRAM, 2KX8, 150ns, MOS, CDIP24 | Standard SRAM, 2KX8, 150ns, MOS, CDIP24 | Standard SRAM, 2KX8, 150ns, MOS, CDIP24 | Standard SRAM, 2KX8, 200ns, MOS, CDIP24 | Standard SRAM, 2KX8, 200ns, MOS, CDIP24 | Standard SRAM, 2KX8, 200ns, MOS, CDIP24 |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
Objectid | 101249059 | 101249030 | 101249040 | 101249032 | 101249057 | 101249050 | 101249052 |
package instruction | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 | DIP, DIP24,.6 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Maximum access time | 200 ns | 150 ns | 150 ns | 150 ns | 200 ns | 200 ns | 200 ns |
I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 code | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 | R-XDIP-T24 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
memory density | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit | 16384 bit |
Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
memory width | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
Number of terminals | 24 | 24 | 24 | 24 | 24 | 24 | 24 |
word count | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words |
character code | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 |
Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
organize | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 | 2KX8 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
encapsulated code | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
Encapsulate equivalent code | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 | DIP24,.6 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum slew rate | 0.1 mA | 0.08 mA | 0.1 mA | 0.08 mA | 0.1 mA | 0.08 mA | 0.08 mA |
Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
surface mount | NO | NO | NO | NO | NO | NO | NO |
technology | MOS | MOS | MOS | MOS | MOS | MOS | MOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |