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bu406

Description
7 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size102KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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BU406 Overview

7 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-220AB

BU406 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current7 A
Maximum Collector-Emitter Voltage200 V
Processing package descriptionTO-220, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingMATTE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE POWER
Rated crossover frequency10 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN PLASTIC POWER TRANSISTORS
BU406
BU407
TO-220
Plastic Package
Horizontal Deflection Output Stages of TV and CRT
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC)
DESCRIPTION
SYMBOL
V
CEO
Collector Emitter Voltage
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Repetitive Peak
Collector Current (10ms) Peak
Base Current
Power Dissipation upto T
c
=25ºC
Derate above 25ºC
Power Dissipation upto T
a
=25ºC
Derate above 25ºC
Operating and Storage
Junction Temperature
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
T
j
, T
stg
P
D
V
CBO
V
CEV
V
EBO
I
C
I
CM
I
CM
I
B
P
D
BU406
200
400
400
6
7
10
15
4
60
480
2
16
- 65 to +150
BU407
150
330
330
UNIT
V
V
V
V
A
A
A
A
W
mW/ºC
W
mW/ºC
ºC
R
th (j-c)
R
th (j-a)
2.08
62.5
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T
c
=25ºC unless specified otherwise )
DESCRIPTION
Collector Emitter (sus) Voltage
Collector Cut off Current
SYMBOL
*V
CEO(sus)
I
CES
TEST CONDITION
I
C
=100mA, I
B
=0
V
CE
=400V, V
BE
=0
V
CE
=330V, V
BE
=0
V
CE
=250V, V
BE
=0
V
CE
=200V, V
BE
=0
BU406
BU407
BU406
BU407
BU406
BU407
MIN
200
150
5.0
5.0
0.1
0.1
MAX
UNIT
V
V
mA
mA
mA
mA
T
c
=150ºC
V
CE
=250V, V
BE
=0
V
CE
=200V, V
BE
=0
*Pulse Test : Pulse width <300µs, Duty Cycle <1%
µ
BU406
BU407
1.0
1.0
mA
mA
Continental Device India Limited
Data Sheet
Page 1 of 4

BU406 Related Products

BU406 BU407
Description 7 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-220AB 7 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Number of terminals 3 3
Maximum collector current 7 A 7 A
Maximum Collector-Emitter Voltage 200 V 150 V
Processing package description TO-220, 3 PIN TO-220, 3 PIN
state ACTIVE Active
packaging shape RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT
Terminal form THROUGH-HOLE THROUGH-HOLE
terminal coating MATTE TIN TIN LEAD
Terminal location SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE SINGLE
Number of components 1 1
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Rated crossover frequency 10 MHz 10 MHz

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