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BU407

Description
7 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size102KB,4 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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BU407 Overview

7 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB

BU407 Parametric

Parameter NameAttribute value
Maximum collector current7 A
Maximum Collector-Emitter Voltage150 V
Number of terminals3
Processing package descriptionTO-220, 3 PIN
each_compliYes
stateActive
Shell connectionCOLLECTOR
structureSINGLE
Minimum DC amplification factor10
jedec_95_codeTO-220AB
jesd_30_codeR-PSFM-T3
jesd_609_codee0
moisture_sensitivity_levelNOT SPECIFIED
Number of components1
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
eak_reflow_temperature__cel_NOT SPECIFIED
larity_channel_typeNPN
wer_dissipation_max__abs_60 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountNO
terminal coatingTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Rated crossover frequency10 MHz
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN PLASTIC POWER TRANSISTORS
BU406
BU407
TO-220
Plastic Package
Horizontal Deflection Output Stages of TV and CRT
ABSOLUTE MAXIMUM RATINGS (T
a
=25ºC)
DESCRIPTION
SYMBOL
V
CEO
Collector Emitter Voltage
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Repetitive Peak
Collector Current (10ms) Peak
Base Current
Power Dissipation upto T
c
=25ºC
Derate above 25ºC
Power Dissipation upto T
a
=25ºC
Derate above 25ºC
Operating and Storage
Junction Temperature
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
T
j
, T
stg
P
D
V
CBO
V
CEV
V
EBO
I
C
I
CM
I
CM
I
B
P
D
BU406
200
400
400
6
7
10
15
4
60
480
2
16
- 65 to +150
BU407
150
330
330
UNIT
V
V
V
V
A
A
A
A
W
mW/ºC
W
mW/ºC
ºC
R
th (j-c)
R
th (j-a)
2.08
62.5
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (T
c
=25ºC unless specified otherwise )
DESCRIPTION
Collector Emitter (sus) Voltage
Collector Cut off Current
SYMBOL
*V
CEO(sus)
I
CES
TEST CONDITION
I
C
=100mA, I
B
=0
V
CE
=400V, V
BE
=0
V
CE
=330V, V
BE
=0
V
CE
=250V, V
BE
=0
V
CE
=200V, V
BE
=0
BU406
BU407
BU406
BU407
BU406
BU407
MIN
200
150
5.0
5.0
0.1
0.1
MAX
UNIT
V
V
mA
mA
mA
mA
T
c
=150ºC
V
CE
=250V, V
BE
=0
V
CE
=200V, V
BE
=0
*Pulse Test : Pulse width <300µs, Duty Cycle <1%
µ
BU406
BU407
1.0
1.0
mA
mA
Continental Device India Limited
Data Sheet
Page 1 of 4

BU407 Related Products

BU407 BU406
Description 7 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-220AB 7 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Maximum collector current 7 A 7 A
Maximum Collector-Emitter Voltage 150 V 200 V
Number of terminals 3 3
Processing package description TO-220, 3 PIN TO-220, 3 PIN
state Active ACTIVE
structure SINGLE SINGLE
Number of components 1 1
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
packaging shape RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT
terminal coating TIN LEAD MATTE TIN
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Rated crossover frequency 10 MHz 10 MHz

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