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BR108

Description
10 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size22KB,2 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
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BR108 Overview

10 A, SILICON, BRIDGE RECTIFIER DIODE

BR108 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current200 A
Number of components4
Maximum operating temperature125 °C
Maximum output current10 A
Maximum repetitive peak reverse voltage800 V
surface mountNO
Base Number Matches1
BR1005
THRU
BR1010
SINGLE PHASE 10 AMP BRIDGE RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
10.0 Amperes
BR-10
FEATURES
* Low forward voltage
* Low leakage current
* Mounting: Hole thru for #6 screw
* Mounting position: Any
.770(19.6)
.730(18.5)
HOLE FOR
NO. 6 SCREW
AC
.296(7.5)
.255(6.5)
.052(1.3) DIA.
.048(1.2) TYP.
.750
MIN.
(19.1)
.520(13.2) .770(19.6)
.480(12.2) .730(18.5)
AC
+
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Tc=50 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage Drop per Bridge Element at 5.0A D.C.
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Operating Temperature Range, T
J
Storage Temperature Range, T
STG
Ta=100 C
BR1005 BR101 BR102 BR104 BR106 BR108 BR1010 UNITS
50
35
50
100
70
100
200
140
200
400
280
400
10
200
1.1
10
200
-65 +125
-65 +150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
mA
mA
C
C

BR108 Related Products

BR108 BR1005 BR101 BR1010 BR102 BR106 BR104
Description 10 A, SILICON, BRIDGE RECTIFIER DIODE 10 A, SILICON, BRIDGE RECTIFIER DIODE 10 A, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 10 A, SILICON, BRIDGE RECTIFIER DIODE 10 A, SILICON, BRIDGE RECTIFIER DIODE 10 A, SILICON, BRIDGE RECTIFIER DIODE
Reach Compliance Code unknow unknown unknow unknow unknow unknow unknow
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 200 A 200 A 200 A 240 A 200 A 200 A 200 A
Number of components 4 4 4 4 4 4 4
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Maximum output current 10 A 10 A 10 A 10 A 10 A 10 A 10 A
Maximum repetitive peak reverse voltage 800 V 50 V 100 V 1000 V 200 V 600 V 400 V
surface mount NO NO NO NO NO NO NO
Base Number Matches 1 - 1 - - 1 1
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