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GD511

Description
The GD511 is designed for ultra high speed switching application, low forward voltage and fast reverse recovery time
File Size229KB,2 Pages
ManufacturerETL [E-Tech Electronics LTD]
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GD511 Overview

The GD511 is designed for ultra high speed switching application, low forward voltage and fast reverse recovery time

ISSUED DATE :2004/11/30
REVISED DATE :
G D 5 11
Description
S U R F A C E M O U N T, S W I T C H I N G D I O D E
V O LT A G E 8 5 V, C U R R E N T 0 . 1 A
Package Dimensions
The GD511 is designed for ultra high speed switching application, low forward voltage and fast reverse recovery time.
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.85
1.05
0
0.10
0.80
1.00
1.15
1.45
1.60
1.80
2.30
2.70
REF.
L
b
c
Q1
Millimeter
Min.
Max.
0.20
0.25
0.10
0.40
0.40
0.18
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Maximum Peak Reverse Voltage
Maximum Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current(10ms)
Total Power Dissipation
Symbol
Tj
Tstg
V
RM
V
R
I
FM
I
O
I
FSM
P
D
Ratings
+150
-55 ~ +150
85
80
300
100
2
150
V
V
mA
mA
A
mW
Unit
Electrical Characteristics at Ta = 25 :
Characteristic
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Symbol
V
F
(1)
V
F
(2)
V
F
(3)
I
R
C
T
Trr
Min.
-
-
-
-
-
-
Typ.
0.6
0.7
0.9
-
2.2
1.6
Max.
-
-
1.2
0.5
4.0
4.0
Unit
V
V
V
A
pF
nS
I
F
=1mA
I
F
=10mA
I
F
=100mA
V
R
=80V
V
R
=0, f=1MHz
I
F
=10mA
Test Conditions
1/2
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