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SMBJ12

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size1MB,4 Pages
ManufacturerJuxing Electronic
Websitehttp://www.trr-jx.com
Download Datasheet View All

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SMBJ12 Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

SMBJ5.0 THRU SMBJ188A
TRANSIENT VOLTAGE SUPPRESSORS
Features
For surface mounted applications in
order to optimize board space
Low profile space
Glass passivated chip
Low inductance
Excellent clamping capability
Very fast response time
Typical I
D
less than 1µA at V
WM
600W peak pulse power capability
with a 10/1000 µs waveform
Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
Mechanical Date
Case: JEDEC DO-214AA molded plastic
over passivated chip
Terminals: Solder plated, solderable per
MIL-STD-750 Method 2026
Polarity: For uni-directional types the band
by laser denotes the cathode, which is
positive with respect to the anode under
normal TVS operation
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g.SMBJ10C, SMBJ10CA).
Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Symbol
Peak pulse power dissipation
with a 10/1000µs waveform (see fig. 1)
Peak pulse current
with a waveform (see fig. 3 , single pulse)
Peak forward surge current
8.3ms single half sine-wave uni-directional only
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
P
PPM
I
PPM
I
FSM
R
θJA
R
θJL
T
J
T
STG
VALUE
600
See Next Table
100
100
20
–55 to +150
UNIT
W
A
A
°C / W
°C / W
°C
http://www.trr-jx.com
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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