IXFR64N50P datasheet, PDF - EEWORLD Datasheet

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IXFR64N50P: DescriptionPower Field-Effect Transistor, 37A I(D), 500V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, ISOPLUS247, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size123KB，5 Pages; ManufacturerIXYS; Environmental Compliance

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IXFR64N50P Overview

Power Field-Effect Transistor, 37A I(D), 500V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, ISOPLUS247, 3 PIN

IXFR64N50P Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Objectid	2060147032
Parts packaging code	TO-247AD
package instruction	PLASTIC, ISOPLUS247, 3 PIN
Contacts	3
Manufacturer packaging code	ISOPLUS
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	AVALANCHE RATED, UL RECOGNIZED
Avalanche Energy Efficiency Rating (Eas)	2500 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	37 A
Maximum drain current (ID)	37 A
Maximum drain-source on-resistance	0.095 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-247AD
JESD-30 code	R-PSFM-T3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	300 W
Maximum pulsed drain current (IDM)	150 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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Polar

Power MOSFET

HiPerFET

(Electrically Isolated Back Surface)

N-Channel Enhancement Mode

Avalanche Rated

Symbol

DSS

DGR

GSS

GSM

D25

dV/dt

stg

SOLD

ISOL

Weight

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

50/60 Hz, RMS

ISOL

≤

1mA

Mounting Force

Test Conditions

= 25°C to 150°C

= 25°C to 150°C, R

= 1MΩ

Continuous

Transient

= 25°C

= 25°C, pulse width limited by T

= 25°C

≤

, V

≤

DSS

, T

≤

150°C

= 25°C

IXFR64N50P

DSS

D25

DS(on)

≤

500V

37A

95mΩ

200ns

Maximum Ratings

500

±30

±40

150

2.5

300

-55 ... +150

150

-55 ... +150

300

260

2500

3000

20..120 / 4.5..27

V/ns

°C

N/lb.

ISOPLUS247

E153432

Isolated Tab

G = Gate

S = Source

D = Drain

Features

International Standard Package

Fast Intrinsic Rectifier

Avalanche Rated

Low R

DS(ON)

and Q

Low Package Inductance

t = 1min

t = 1s

Advantages

High Power Density

Easy to Mount

Space Savings

Symbol

Test Conditions

= 25°C, Unless Otherwise Specified)

DSS

GS(th)

GSS

DSS

DS(on)

= 0V, I

= 250μA

= V

, I

= 8mA

±30V,

= 0V

= V

DSS

, V

= 0V

= 10V, I

= 32A, Note 1

= 125°C

Characteristic Values

Min.

Typ.

Max.

500

3.0

5.5

Applications

Switched-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

±200

μA

1 mA

95 mΩ

DS99412F(5/09)

IXFR64N50P Related Products

	IXFR64N50P
Description	Power Field-Effect Transistor, 37A I(D), 500V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, ISOPLUS247, 3 PIN
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Objectid	2060147032
Parts packaging code	TO-247AD
package instruction	PLASTIC, ISOPLUS247, 3 PIN
Contacts	3
Manufacturer packaging code	ISOPLUS
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	AVALANCHE RATED, UL RECOGNIZED
Avalanche Energy Efficiency Rating (Eas)	2500 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	37 A
Maximum drain current (ID)	37 A
Maximum drain-source on-resistance	0.095 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-247AD
JESD-30 code	R-PSFM-T3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	300 W
Maximum pulsed drain current (IDM)	150 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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