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MJE520

Description
RF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-247VAR, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size95KB,1 Pages
ManufacturerElectronic Transistors Corp
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MJE520 Overview

RF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-247VAR, 3 PIN

MJE520 Parametric

Parameter NameAttribute value
Objectid1876660530
Parts packaging codeTO-247
package instructionFLANGE MOUNT, R-XSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage30 V
JESD-30 codeR-XSFM-T3
Number of components1
Number of terminals3
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON

MJE520 Related Products

MJE520 2N2101
Description RF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-247VAR, 3 PIN Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Reach Compliance Code unknown unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 3 A 3 A
Collector-emitter maximum voltage 30 V 40 V
Number of components 1 1
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Transistor component materials SILICON SILICON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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