2N2101 datasheet, PDF - EEWORLD Datasheet

2N2101: DescriptionPower Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon; CategoryDiscrete semiconductor The transistor; File Size95KB，1 Pages; ManufacturerElectronic Transistors Corp

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2N2101 Overview

Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon

Parameter Name	Attribute value
Maker	Electronic Transistors Corp
package instruction	,
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	40 V
Configuration	Single
Minimum DC current gain (hFE)	15
Number of components	1
Maximum operating temperature	200 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	75 W
Certification status	Not Qualified
surface mount	NO
Transistor component materials	SILICON
Nominal transition frequency (fT)	0.025 MHz

	2N2101	MJE520
Description	Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon	RF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-247VAR, 3 PIN
Reach Compliance Code	unknow	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	3 A	3 A
Collector-emitter maximum voltage	40 V	30 V
Number of components	1	1
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Transistor component materials	SILICON	SILICON

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