SMD Type
PNP Transistors
2SA1774
SOT-523
+0.
1
1.6
-0.1
+0.1
1.0
-0.1
+0.05
0.2
-0.05
Transistors
U n it: m m
0.15±0.05
0.55 (REF.)
■
Features
●
Reduces Board Space
●
High h
FE
●
Low V
CE(sat)
2
1
1.
-0.15
6
+0.15
3
0.3±0.05
+0.1
0.5
-0.1
0.
36±0.1
1. Base
0.
-0.05
75
+0.05
+0.
1
-0.
1
0.
8
2. Emitter
3. Collecter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
-60
-50
-6
-150
150
150
-55 to 150
mA
mW
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
(Note.1)
Base - emitter saturation voltage (Note.1)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
ob
f
T
Test Conditions
Ic= -50 μA， I
E
=0
Ic= -1 mA， I
B
=0
I
E
= -50μA， I
C
=0
V
CB
= -60 V , I
E
=0
V
EB
= -6V , I
C
=0
I
C
=-50 mA, I
B
=-5mA
I
C
=-50 mA, I
B
=-5mA
V
CE
= -6V, I
C
= -1mA
V
CB
= -12V, I
E
= 0mA,f=1MHz
V
CE
= -12V, I
C
= -2mA,f=30MHz
120
3.5
140
Min
-60
-50
-6
-100
-100
-0.5
-1.2
560
5
pF
MHz
nA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
Marking
2SA1774-Q
120-270
FQ
2SA1774-R
180-390
FR
2SA1774-S
270-560
FS
0.
8±0.1
www.kexin.com.cn
1
SMD Type
PNP Transistors
2SA1774
■
Typical Characterisitics
-100
Transistors
Static Characteristic
-500uA
-450uA
-400uA
COMMON
EMITTER
T
a
=25
℃
h
FE
-300uA
600
500
400
h
FE
——
I
C
COMMON EMITTER
V
CE
=-6V
(mA)
-80
-350uA
T
a
=100
℃
I
C
COLLECTOR CURRENT
-60
DC CURRENT GAIN
-250uA
-200uA
300
T
a
=25
℃
200
-40
-150uA
-100uA
-20
I
B
=-50uA
-0
100
-0.3
-0
-2
-4
-6
-8
-10
-1
-3
-10
-30
-100
-200
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-1000
V
CEsat
——
I
C
-1000
V
BEsat
—— I
C
COLLECTOR-EMMITTER SATURATION
VOLTAGE V
CEsat
(mV)
-300
-100
T
a
=100
℃
-30
BASE-EMMITTER SATURATION
VOLTAGE V
BEsat
(mV)
T
a
=25
℃
T
a
=100
℃
T
a
=25
℃
-500
-10
-3
-1
-0.1
β=10
-0.3
-1
-3
-10
-30
-100
-200
-300
-0.1
-0.3
-1
-3
-10
-30
β=10
-100
-200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
-100
I
C
——
V
BE
V
CE
=-6V
30
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
(mA)
-30
T
a
=25
℃
(pF)
T
a
=100
℃
10
I
C
-10
C
ib
COLLECTOR CURRENT
-3
T
a
=25
℃
CAPACITANCE
C
C
ob
3
-1
-0.3
-0.1
-0.2
-0.4
-0.6
-0.8
-1.0
1
-0.1
-0.3
-1
-3
-10
-20
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
200
P
c
——
T
a
COLLECTOR POWER DISSIPATION
P
c
(mW)
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
2
www.kexin.com.cn
Analogue and Mixed Signal
京公网安备 11010802033920号
EEWORLD
