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2SC3646-T

Description
NPN Transistors
File Size1MB,3 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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2SC3646-T Overview

NPN Transistors

SMD Type
NPN Transistors
2SC3646
Transistors
Features
High breakdown voltage and large current capacity.
Fast switching speed.
Complementary to 2SA1416
0.42 0.1
1.70
0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Peak Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
J
T
stg
Rating
120
100
6
1
2
500
150
-55 to 150
A
mW
V
Unit
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-ON Time
Storage Time
Fall Time
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
t
on
t
stg
t
f
C
ob
f
T
V
CB
= 10V,f=1MHz
V
CE
= 10V, I
C
= 100mA
See sepcified Test Circuit.
Test Conditions
Ic= 100 μA, I
E
= 0
Ic= 1 mA,R
BE
=
I
E
= 100μA, I
C
= 0
V
CB
= 100 V , I
E
= 0
V
EB
= 4V , I
C
=0
I
C
=400 mA, I
B
=40mA
I
C
=400 mA, I
B
=40mA
V
CE
= 5V, I
C
= 100mA
100
80
850
50
8.5
120
pF
MHz
ns
0.1
0.85
Min
120
100
6
0.1
0.1
0.4
1.2
400
uA
V
V
Typ
Max
Unit
Classification of h
fe
Type
Range
Marking
2SC3646-R
100-200
CBR
2SC3646-R
140-280
CBS
2SC3646-T
200-400
CBT
www.kexin.com.cn
1

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