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2SA1330-HF-3_15

Description
PNP Transistors
File Size1MB,3 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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2SA1330-HF-3_15 Overview

PNP Transistors

SMD Type
PNP Transistors
2SA1330-HF
SOT-23-3
+0.2
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
Features
High DC current gain.
High voltage.
Complementary to 2SC3360-HF
+0.2
2.8
-0.1
3
+0.2
1.6
-0.1
1
2
0.55
0.4
0.95
+0.1
-0.1
+0.1
1.9
-0.2
+0.02
0.15
-0.02
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.2
1.1
-0.1
1. Base
2. Emitter
+0.1
0.68
-0.1
0-0.1
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
-200
-200
-5
-100
200
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage *
Base - emitter saturation voltage *
Base - emitter voltage *
DC current gain *
Turn-on time
Storage time
Turn-off time
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
Test Conditions
Ic= -100 μA, I
E
=0
Ic= -1 mA, I
B
=0
I
E
= -100μA, I
C
=0
V
CB
= -200 V , I
E
=0
V
EB
= -5V , I
C
=0
I
C
=-50 mA, I
B
=- 5mA
I
C
=-50 mA, I
B
=- 5mA
V
CE
= -10V, I
C
= -10mA
-0.6
90
50
-0.21
-0.8
-0.65
200
195
0.16
1.3
0.18
3.6
120
pF
MHz
us
Min
-200
-200
-5
-100
-100
-0.3
-1.2
-0.7
450
V
nA
V
Typ
Max
Unit
h
FE
(1)
V
CE
= -10V, I
C
= -10mA
h
FE
(2)
V
CE
= -10V, I
C
=-50mA
t
r
t
s
t
off
C
ob
f
T
V
CC
=-10V,V
BE(off)
=2.5V
I
C
=-10mA,I
B1
=
IB2
=-1.0mA
V
CB
= -30V, I
E
= 0,f=1MHz
V
CE
= -10V, I
E
= 10mA
* Pulse test: tp
350 us; duty cycle
0.02.
Classification of h
fe(1)
Type
Range
Marking
2SA1330-O5-HF 2SA1330-O6-HF 2SA1330-O7-HF
90-180
O5
F
135-270
O6
F
200-450
O7
F
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