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AO6601-HF

Description
Complementary Trench MOSFET
File Size3MB,7 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
Download Datasheet View All

AO6601-HF Overview

Complementary Trench MOSFET

SMD Type
Complementary Trench MOSFET
MOSFET
AO6601-HF
(KO6601-HF)
Features
N-Channel :
V
DS (V)
= 30V
I
D
= 3.4 A (V
GS
= 10V)
R
DS(ON)
60mΩ (V
GS
= 10V)
R
DS(ON)
70mΩ (V
GS
= 4.5V)
R
DS(ON)
90mΩ (V
GS
= 2.5V)
P-Channel :
V
DS (V)
= -30V
I
D
= -2.3 A (V
GS
= 10V)
R
DS(ON)
115mΩ (V
GS
= -10V)
R
DS(ON)
150mΩ (V
GS
= -4.5V)
R
DS(ON)
200mΩ (V
GS
= -2.5V)
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
D1
D2
( SOT-23-6 )
Unit: mm
0.4
-0.1
+0.1
6
5
4
+0.2
1.6
-0.1
+0.2
2.8
-0.1
1
2
3
+0.01
-0.01
0.55
0.4
+0.02
0.15
-0.02
+0.2
-0.1
+0.1
1.1
-0.1
G1
S1
G2
S2
N-channel
P-channel
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
Junction Temperature
Storage Temperature Range
TA=25℃
TA=70℃
t
10s
Steady-State
TA=25℃
TA=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJL
T
J
T
stg
3.4
2.7
20
1.15
0.73
110
150
80
150
-55 to 150
℃/W
N-Channel
30
±12
-2.3
-1.8
-15
W
A
P-Channel
-30
Unit
V
+0.1
0.68
-0.1
1 G1
2 S2
3 G2
4 D2
5 S1
6 D1
0-0.1
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