TQP3M9008
High Linearity LNA Gain Block
Applications
•
•
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•
Repeaters
Mobile Infrastructure
LTE / WCDMA / EDGE / CDMA
General Purpose Wireless
3-pin SOT-89 Package
Product Features
•
•
•
•
•
•
•
•
•
50 – 4000 MHz
20.6 dB Gain at 1.9 GHz
+36 dBm Output IP3
1.3 dB Noise Figure at 1.9 GHz
50 Ohm Cascadable Gain Block
Unconditionally stable
High input power capability
+5 V Single Supply, 85 mA Current
SOT-89 Package
Functional Block Diagram
General Description
The TQP3M9008 is a cascadable, high linearity gain
block amplifier in a low-cost surface-mount package. At
1.9 GHz, the amplifier typically provides 20.6 dB gain,
+36 dBm OIP3, and 1.3 dB Noise Figure while only
drawing 85 mA current. The device is housed in a lead-
free/green/RoHS-compliant industry-standard SOT-89
package using a NiPdAu plating to eliminate the
possibility of tin whiskering.
The TQP3M9008 has the benefit of having high gain
across a broad range of frequencies while also providing
very low noise. This allows the device to be used in both
receiver and transmitter chains for high performance
systems. The amplifier is internally matched using a high
performance E-pHEMT process and only requires an
external RF choke and blocking/bypass capacitors for
operation from a single +5 V supply. The internal active
bias circuit also enables stable operation over bias and
temperature variations.
The TQP3M9008 covers the 0.05 – 4 GHz frequency
band and is targeted for wireless infrastructure or other
applications requiring high linearity and/or low noise
figure.
Datasheet Rev. M 05-06-14
© 2014 TriQuint
Pin Configuration
Pin No.
1
2
3
Backside Paddle
Label
RF Input
GND
RF Output / V
DD
GND
Ordering Information
Part No.
Description
TQP3M9008
High Linearity LNA Gain Block
TQP3M9008-PCB_IF 0.05 – 0.5 GHz Evaluation Board
TQP3M9008-PCB_RF 0.5 – 4.0 GHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel
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TQP3M9008
High Linearity LNA Gain Block
Absolute Maximum Ratings
Parameter
Storage Temperature
°
RF Input Power, CW, 50Ω, T=25 C
Device Voltage (V
DD
)
Reverse Device Voltage
Recommended Operating Conditions
Parameter
Device Voltage (V
DD
)
T
CASE
6
Tj for >10 hours MTTF
Rating
−65 to 150 °C
+23 dBm
+7 V
−0.3 V
Min
+3.0
−40
Typ
+5.0
Max Units
+5.25
+105
+190
V
°
C
°
C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted:
V
DD
= +5 V, Temp. = +25 ° 50
Ω
system
C,
Parameter
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure
Current, I
DD
Thermal Resistance,
θ
jc
Conditions
Min
50
19
Typ
1900
20.6
16
17
+20
+36
1.3
85
Max
4000
22
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
mA
°
C/W
Pout = +3 dBm/tone,
∆f = 1
MHz
+32.5
Junction to case
100
38.7
Datasheet Rev. M 05-06-14
© 2014 TriQuint
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TQP3M9008
High Linearity LNA Gain Block
S-Parameters
Test Conditions: V
DD
= +5 V, I
DD
= 85 mA, Temp. = +25
°
50 Ω system, calibrated to device leads
C,
Freq (MHz)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
3200
3400
3600
3800
4000
S11 (dB)
-12.5
-11.9
-11.4
-11.4
-11.6
-11.8
-12.3
-12.7
-13.3
-13.6
-13.9
-14.3
-15.1
-15.8
-16.8
-18.0
-19.8
-19.9
-17.8
-14.3
-11.3
-8.7
S11 (ang)
-170.0
-175.1
178.0
167.0
154.1
147.2
139.1
132.1
126.3
116.9
110.2
103.5
94.6
85.2
72.7
55.2
25.5
-16.8
-59.0
-90.8
-114.3
-132.7
S21 (dB)
23.6
23.5
23.1
22.7
22.3
22.0
21.7
21.4
21.0
20.8
20.5
20.3
19.9
19.7
19.5
19.2
19.0
18.6
18.3
17.7
17.0
16.1
S21 (ang)
172.9
167.7
159.5
144.1
129.4
114.6
99.5
85.6
71.0
56.2
41.8
27.9
13.8
-1.1
-16.0
-31.3
-46.9
-63.5
-80.5
-98.5
-117.1
-135.8
S12 (dB)
-26.7
-26.7
-26.6
-26.7
-26.7
-26.7
-26.8
-26.9
-27.1
-27.4
-27.6
-28.1
-28.5
-28.7
-29.4
-29.9
-30.6
-31.0
-31.8
-32.8
-34.0
-34.8
S12 (ang)
0.6
-1.9
-5.5
-12.9
-19.6
-26.1
-33.4
-39.9
-47.7
-56.5
-63.3
-71.6
-80.2
-88.9
-96.8
-105.7
-117.1
-128.0
-139.4
-154.4
-168.1
173.1
S22 (dB)
-9.8
-9.9
-10.0
-10.5
-10.7
-11.3
-12.4
-13.1
-14.3
-15.4
-16.3
-17.5
-18.0
-17.4
-16.6
-14.9
-14.1
-13.1
-12.4
-11.9
-11.2
-10.7
S22 (ang)
177.2
171.9
162.2
145.5
129.3
111.8
94.3
77.8
58.7
36.8
15.3
-11.2
-39.1
-65.9
-94.2
-115.0
-131.7
-148.3
-160.2
-173.9
174.5
167.6
Datasheet Rev. M 05-06-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com
TQP3M9008
High Linearity LNA Gain Block
TQP3M9008-PCB_IF / RF Evaluation Board
Notes:
1. See Evaluation Board PCB section for material and stack-up.
2. Components shown on the silkscreen but not on the schematic are not used.
3. R1 (0
Ω
jumper) may be replaced with copper trace in the target application layout.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
Bill of Material − TQP3M9008-PCB_IF / RF
Reference Designation
Q1
C1, C2
C3
L1
D1
R1
TQP3M9008-PCB_IF
50 - 500 MHz
TQP3M9008
1000 pF
0.01 uF
330 nH
Do Not Place
0
Ω
TQP3M9008-PCB_RF
500 - 4000 MHz
TQP3M9008
100 pF
0.01 uF
68 nH
Performance can be optimized at frequency of interest by using recommended component values shown in the table below.
Reference
Designation
C1, C2
L1
500
100 pF
82 nH
Frequency (MHz)
2000
2500
22 pF
22 nH
22 pF
18 nH
3500
22 pF
15 nH
Datasheet Rev. M 05-06-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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TQP3M9008
High Linearity LNA Gain Block
Typical Performance − TQP3M9008-PCB_RF
Test conditions unless otherwise noted:
V
DD
=+5 V,
I
DD
=85 mA, Temp=+25 ° 50
Ω
system
C,
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3
Noise figure
500
22.8
10
9.5
+20.9
+37.5
1.1
900
22.3
12
12
+19.7
+37.6
1.1
Typical Value
1900
20.6
16
17
+19.9
+36
1.3
2700
19.0
18
13
+19.4
+35.3
1.6
3500
17.6
10
12.4
+19.7
+34.7
2
4000
16.0
7.3
14
+18.5
+33.7
2.5
Units
MHz
dB
dB
dB
dBm
dBm
dB
Notes:
1. OIP3 measured with two tones at an output power of +3 dBm / tone separated by 1 MHz.
2. Noise figure values in the table above includes board losses. Approx. =0.1dB at 2 GHz.
Performance Plots − TQP3M9008-PCB_RF
Test conditions unless otherwise noted:
V
DD
=
+5
V,
I
DD
=
85 mA, Temp.
=
+25 ° 50
Ω
system
C,
Gain vs. Frequency over Temp
24
22
-40 C
-20 C
+25 C
+85⁰C
S11 vs. Frequency over Temp
0
-5
+85 C
+25 C
-40 C
-20⁰C
S22 vs. Frequency over Temp
0
-40 C
-20 C
+25 C
+85⁰C
-5
S11 (dB)
Gain (dB)
20
18
16
14
500
1000
1500
2000
2500
-10
-15
-20
-25
S22 (dB)
-10
-15
-20
500
1000
1500
2000
2500
3000
3500
4000
500
1000
1500
Frequency (MHz)
2000
2500
3000
Frequency (MHz)
3500
4000
3000
3500
4000
Frequency (MHz)
Noise Figure vs. Frequency over Temp
4
45
OIP3 vs. Pout/tone over Temp
F=1900 MHz, 1 MHz tone spacing
OIP3 vs. Frequency over Temp
45
1 MHz tone spacing, 3 dBm/tone
3
NF (dB)
2
OIP3 (dBm)
35
OIP3 (dBm)
+85 C
+25 C
-40 C
40
+25 C
+85 C
-40 C
40
+25 C
+85 C
-40 C
35
1
30
30
0
500
1000
1500
2000
2500
3000
3500
4000
Frequency (MHz)
25
0
3
6
Pout/tone (dBm)
9
12
25
500
1000
1500
2000 2500 3000
Frequency (MHz)
3500
4000
Datasheet Rev. M 05-06-14
© 2014 TriQuint
-
5 of 10
-
Disclaimer: Subject to change without notice
www.triquint.com
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