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BAV19W-GRB

Description
0.2 A, 100 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size190KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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BAV19W-GRB Overview

0.2 A, 100 V, SILICON, SIGNAL DIODE

BAV19W-GRB Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-G2
Maximum non-repetitive peak forward current2.5 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.5 W
Maximum repetitive peak reverse voltage120 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1

BAV19W-GRB Related Products

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Description 0.2 A, 100 V, SILICON, SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE 0.2 A, 150 V, SILICON, SIGNAL DIODE 0.2 A, 200 V, SILICON, SIGNAL DIODE

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