BAV19W-GRBG datasheet, PDF - EEWORLD Datasheet

BAV19W-GRBG: Description0.2 A, 100 V, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size190KB，5 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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BAV19W-GRBG Overview

0.2 A, 100 V, SILICON, SIGNAL DIODE

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PDSO-G2
Maximum non-repetitive peak forward current	2.5 A
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.5 W
Maximum repetitive peak reverse voltage	120 V
Maximum reverse recovery time	0.05 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Base Number Matches	1

	BAV19W-GRBG	BAV19W-G	BAV19W-G-N0RB	BAV19W-G-N0RBG	BAV19W-GRB	BAV19W-G_14	BAV20W-G	BAV21W-G
Description	0.2 A, 100 V, SILICON, SIGNAL DIODE	0.2 A, 100 V, SILICON, SIGNAL DIODE	0.2 A, 100 V, SILICON, SIGNAL DIODE	0.2 A, 100 V, SILICON, SIGNAL DIODE	0.2 A, 100 V, SILICON, SIGNAL DIODE	0.2 A, 100 V, SILICON, SIGNAL DIODE	0.2 A, 150 V, SILICON, SIGNAL DIODE	0.2 A, 200 V, SILICON, SIGNAL DIODE

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