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MBR30H100CTC0

Description
15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
CategoryDiscrete semiconductor    diode   
File Size194KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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MBR30H100CTC0 Overview

15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

MBR30H100CTC0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.98 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage100 V
Maximum reverse current10 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
MBR30H100CT
Taiwan Semiconductor
CREAT BY ART
FEATURES
Dual Common Cathode Schottky Rectifier
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
As marked
Mounting torque:
5 in-lbs maximum
Weight:
1.9 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, square wave, 20KHz)
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I
F
=15A, T
J
=25℃
I
F
=15A, T
J
=125℃
I
F
=30A, T
J
=25℃
I
F
=30A, T
J
=125℃
Maximum reverse current @ rated VR
T
J
=25
T
J
=125
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0
μs,
1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
MBR30H100CT
100
70
100
30
30
150
1
0.85
0.75
0.98
0.85
UNIT
V
V
V
A
A
A
A
V
F
V
I
R
dV/dt
R
θJC
T
J
T
STG
10
2
10000
2
- 55 to +175
- 55 to +175
μA
mA
V/μs
O
C/W
O
O
C
C
Document Number: DS_D1308032
Version: I13

MBR30H100CTC0 Related Products

MBR30H100CTC0 MBR30H100CTC0G MBR30H100CT_14 MBR30H100CT
Description 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
Maker Taiwan Semiconductor Taiwan Semiconductor - Taiwan Semiconductor
Reach Compliance Code compli compli - compli
ECCN code EAR99 EAR99 - EAR99
Other features LOW POWER LOSS LOW POWER LOSS - FREE WHEELING DIODE, LOW POWER LOSS, UL RECOGNIZED
application EFFICIENCY EFFICIENCY - EFFICIENCY
Shell connection CATHODE CATHODE - CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS - COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON - SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE
JEDEC-95 code TO-220AB TO-220AB - TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3
Maximum non-repetitive peak forward current 150 A 150 A - 150 A
Number of components 2 2 - 2
Phase 1 1 - 1
Number of terminals 3 3 - 3
Maximum operating temperature 175 °C 175 °C - 175 °C
Minimum operating temperature -55 °C -55 °C - -65 °C
Maximum output current 15 A 15 A - 15 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT
Maximum repetitive peak reverse voltage 100 V 100 V - 100 V
surface mount NO NO - NO
technology SCHOTTKY SCHOTTKY - SCHOTTKY
Terminal form THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE
Terminal location SINGLE SINGLE - SINGLE

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