SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - DECEMBER 1998
FEATURES
FCX1147A
C
*
*
*
*
*
2W POWER DISSIPATION
20A Peak Pulse Current
Excellent H
FE
Characteristics up to 20 Amps
Extremely Low Saturation Voltage E.g. 25mv Typ.
Extremely Low Equivalent On-resistance;
R
CE(sat)
53mΩ at 3A
FCX1047A
147
E
C
B
Complimentary Type -
Partmarking Detail -
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current **
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
-15
-12
-5
-20
-3
-500
1 †
2 ‡
-55 to +150
UNIT
V
V
V
A
A
mA
W
W
°C
† recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.
FCX1147A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
VALUE
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CES
V
(BR)CEO
V
(BR)CEV
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
MIN.
-15
-12
-12
-12
-5
-0.3
-0.3
-0.3
-25
-70
-90
-115
-160
-250
-820
-770
270
250
200
200
150
90
450
400
340
300
245
145
50
115
80
150
220
-10
-10
-10
-50
-110
-130
-170
-250
-400
-1000
-950
TYP.
MAX.
UNIT
V
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
CONDITIONS.
I
C
=-100µA
I
C
=-100µA
I
C
=-10mA
I
C
=-100µA, V
EB
=+1V
I
E
=-100µA
V
CB
=-12V
V
EB
=-4V
V
CES
=-10V
I
C
=-0.1A, I
B
=-1mA*
I
C
=-0.5A, I
B
=-2.5mA*
I
C
=-1A, I
B
=-6mA*
I
C
=-2A, I
B
=-20mA*
I
C
=-3A, I
B
=-30mA*
I
C
=-5A, I
B
=-50mA*
I
C
=-3A, I
B
=-30mA*
I
C
=-3A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-2.0A, V
CE
=-2V*
I
C
=-3.0A, V
CE
=-2V*
I
C
=-5.0A, V
CE
=-2V*
I
C
=-10.0A, V
CE
=-2V*
I
C
=-20.0A, V
CE
=-2V*
MHz
pF
ns
ns
I
C
=-50mA, V
CE
=-10V
f=50MHz
V
CB
=-10V, f=1MHz
I
C
=-4A, I
B
=-40mA,
V
CC
=-10V
I
C
=-4A, I
B
=−40mA,
V
CC
=-10V
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
850
Transition Frequency
Output Capacitance
Switching Times
f
T
C
cb
t
on
t
off
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
Real-time operating system RTOS
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